| Allicdata Part #: | IRF6620TRPBFTR-ND |
| Manufacturer Part#: |
IRF6620TRPBF |
| Price: | $ 0.40 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 20V 27A DIRECTFET |
| More Detail: | N-Channel 20V 27A (Ta), 150A (Tc) 2.8W (Ta), 89W (... |
| DataSheet: |  IRF6620TRPBF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.40000 |
| 10 +: | $ 0.38800 |
| 100 +: | $ 0.38000 |
| 1000 +: | $ 0.37200 |
| 10000 +: | $ 0.36000 |
Specifications
| Vgs(th) (Max) @ Id: | 2.45V @ 250µA |
| Package / Case: | DirectFET™ Isometric MX |
| Supplier Device Package: | DIRECTFET™ MX |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.8W (Ta), 89W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 4130pF @ 10V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 42nC @ 4.5V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 2.7 mOhm @ 27A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 27A (Ta), 150A (Tc) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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IRF6620TRPBF is an advanced technology MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) designed to replace the obsolete and inefficient bipolar transistors used in analog and digital circuits. It is a single N-channel MOSFET which ensures high switching performance in demanding applications. It is suitable for use in automotive, industrial, medical and consumer goods.
Working Principle
MOSFETs operate based on the principle of depletion layer, which is where the action takes place. It contains two semiconductor surfaces. An N-type layer and P-type layer. Between these two, a depletion layer is created, which keeps unwanted electrons and allows controlled electric current to flow. An electric field creates an electric circuit between the N type and P type layers. Once the gate voltage of the MOSFET is turned on, current passes through the gate and travels to a source where it is dissipated. A MOSFET works on the principle that current does not flow through the gate, but instead is controlled by the gate voltage. This is what makes MOSFETs more efficient than their predecessors.Advantages of IRF6620TRPBF MOSFETs
The IRF6620TRPBF MOSFET has been designed with many advantages over traditional MOSFETs. Some of these advantages include:- High switching speed – IRF6620TRPBF can switch at MHz rates, making them ideal for high-speed applications.
- Low voltage operation – These devices can operate at low voltages, allowing for more efficient operation and increased power savings.
- Low power consumption – The IRF6620TRPBF can use very low power, so it can be used in battery-powered devices.
- High current carriers – The current carriers of the IRF6620TRPBF can handle high levels of current, allowing for increased reliability.
- Low thermal resistance – The low thermal resistance of the IRF6620TRPBF ensures that the temperature of the MOSFET is kept to a minimum.
Applications of IRF6620TRPBF MOSFETs
IRF6620TRPBF MOSFETs are widely used in numerous consumer and industrial applications. They are suitable for use in automotive electronics, consumer appliances, industrial robotics, and medical equipment. They are also widely used in power supplies, audio amplifiers, and DC-DC converters. The IRF6620TRPBF is an ideal choice for applications requiring high current drive and fast switching speed. They can be used in power supplies, audio amplifiers, DC-DC step-down converters, motor speed control, and switching applications. They have also been used in pulse power applications and motor controllers. In addition, the IRF6620TRPBF is suitable for automotive applications like electronic power steering, electronic throttle control and air suspension systems. This device has also been used in a wide range of consumer applications such as home appliances, energy efficient lighting solutions, and industrial motor controls.Conclusion
The IRF6620TRPBF is an advanced MOSFET device suitable for use in a wide variety of applications. It operates on the principle that current is controlled by gate voltage and offers low power consumption, high switching speed, high current carriers and low thermal resistance. These advantages make the IRF6620TRPBF an ideal choice for high-speed applications and power supplies.The specific data is subject to PDF, and the above content is for reference
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