IRF6802SDTR1PBF

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IRF6802SDTR1PBF is a dual high side switch N/P Channel MOSFET array composed of two independent N-Channel Enhancement Mode Power MOSFETs contained in a single package. These devices are designed for audio and general switching applications. It has a maximum standby current of 15µA and a outstanding maximum on-state resistance of 15mΩ, making it efficient and long lasting. Due to its high on-state resistance, it can operate with low voltage/current, making it extremely energy efficient as well. The device is also suitable for applications that require effective power handling, such as wireless chargers.The fundamental applications of the IRF6802SDTR1PBF come from its unique characteristics: the combination of low input and control voltage and its ability to turn-on and shut-off quickly without generating EMI, in addition to its excellent thermal performance.The device is widely used in automotive systems, such as engine start/stop, headlight, cooling fan, door switches and in Power Over Ethernet (PoE) applications.This device is also used to drive DC Motors in low power applications, such as fan control, drive motor control and robotic control.The working principle of the IRF6802SDTR1PBF is based on the Gate-Source voltage (VGS) control of two differently doped power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistor). When the voltage of VGS is applied and the current reaches the set level transition point, N-Channel MOSFET turns-on and the connected load starts to draw current (Id) and the current flows through the power MOSFET. To turn-off the MOSFET, a reverse voltage (negative voltage) must be applied at the gate terminal. Thus, the working of this device is basically electrical in nature, i.e. the control signal needed is simply the voltage/current needed to operate the power MOSFETs.The device offers excellent low on-state resistance, along with fast response time and low gate charge. This makes it suitable for driving high power loads and for applications which require fast switching and high current handling capabilities.

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