Allicdata Part #: | IRF7101PBF-ND |
Manufacturer Part#: |
IRF7101PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2N-CH 20V 3.5A 8-SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 3.5A 2W Surfac... |
DataSheet: | IRF7101PBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Base Part Number: | IRF7101PBF |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 2W |
Input Capacitance (Ciss) (Max) @ Vds: | 320pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 100 mOhm @ 1.8A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.5A |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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IRF7101PBF is a three-channel enhancement mode Field Effect Transistor (FET) with a wide operating temperature range. It is a four-pin in-line MOSFET, which provides four terminals of Gate, Drain, Source, and Body for user access. As compared to other MOSFETs that are just one channel, the IRF7101PBF has three and can be used to control power supply or signal in a circuit as it is independent from each other. It has a maximun drain source voltage (VDS) of 100V, a maximun drain current (ID) of 46A, and an enhanced rate of operation.
The IRF7101PBF can be used in a wide array of applications, such as DC-DC converters, audio amplifiers, motor controllers, and light dimmers. It is often used in the power stages of audio amplifiers because of its versatile nature, allowing it to easily switch between different signal types and levels. It is also used in high frequency switching applications such as DC-DC converters, as it is capable of operating at a frequency of up to 150 MHz. In addition, it is used in high-power AC/DC converters due to its low on-resistance and low gate capacitance.
The primary benefit of using the IRF7101PBF is its low voltage operation, which allows it to be used in low voltage power supplies without requiring additional voltage components such as ballasts or transformers. Additionally, due to its low on-resistance, it is often used in power supply applications where power loss needs to be minimized. Finally, its enhanced switching speed allows it to quickly adjust to changing voltage and current levels in applications such as motor control.
The IRF7101PBF operates on the principle of Field-Effect Transistor (FET) technology. In FETs, the voltage applied at the gate creates a field in the semiconductor material which then controls the flow of electrons (or carriers) from the source to the drain. This field is created through the use of an electric gate electrode, which creates a voltage between the source and drain. The electric field created by the gate determines how many carriers are allowed to flow from the source to the drain, thereby controlling the current flow between them. In the case of the IRF7101PBF, the operating temperature range and the low on-resistance allows it to be used in a wide array of applications.
In summary, the IRF7101PBF is a three-channel enhancement mode Field Effect Transistor (FET) with a wide operating temperature range. It is used in applications such as DC-DC converters, audio amplifiers, motor controllers, and light dimmers due to its low voltage operation, low on-resistance, and enhanced switching speed. The IRF7101PBF operates on the principle of Field-Effect Transistor (FET) technology, where the electric field created by the gate determines how many carriers are allowed to flow from the source to the drain, thereby controlling the current flow between them.
The specific data is subject to PDF, and the above content is for reference
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