IRF7413TRPBF Allicdata Electronics
Allicdata Part #:

IRF7413PBFTR-ND

Manufacturer Part#:

IRF7413TRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 13A 8-SOIC
More Detail: N-Channel 30V 13A (Ta) 2.5W (Ta) Surface Mount 8-S...
DataSheet: IRF7413TRPBF datasheetIRF7413TRPBF Datasheet/PDF
Quantity: 4000
Stock 4000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 79nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 11 mOhm @ 7.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The IRF7413TRPBF is a N-channel metal oxide semiconductor field effect transistor (MOSFET), a three-terminal, normally-off device. It is designed for power switching applications, such as DC-DC converters, automotive applications and power management. The maximum drain-source voltage(VDS) for this device is typically 100V. The drain current can reach up to 4.7 A. It has a low gate threshold voltage(Vgs) which makes it especially suited for low power switching applications. The low gate threshold voltage also allows it to be turned on with low input voltages.

The IRF7413TRPBF can be used in a variety of power-switching applications, including automotive, industrial and consumer applications. In an automotive application, it can be used to provide an efficient switch to control the power supply to the engine or to the electrical accessories. It can be used in power management applications, such as motor control or AC-DC conversion, where an efficient and reliable power switch is required. It is also used in consumer applications, such as switching power supplies and other power delivery designs.

The working principle of the IRF7413TRPBF is based on the flow of electrons in a semiconductor material. When biased by a voltage, electrons in the semiconductor material move toward the drain of the transistor, creating a current. When biased by a gate voltage, the channel of the transistor opens up, allowing the electrons to flow from source to the drain. This controls the current flow in the circuit, allowing the transistor to act as an efficient switch.

The IRF7413TRPBF is constructed using advanced manufacturing techniques with a focus on reliability and power efficiency. Its packaging and design are optimized for reliable operation in harsh environments. Its temperature range is -55°C to 175°C, which makes it suitable for applications in extreme temperatures. It also has low gate capacitance, low input capacitance and low on-resistance.

In summary, the IRF7413TRPBF is a three-terminal, normally-off device designed for power switching applications such as DC-DC converters and automotive applications. Its maximum drain-source voltage is typically 100V, and its drain current can reach up to 4.7 A. Its low gate threshold voltage and efficient construction makes it suitable for low power switching applications. Its temperature range is -55°C to 175°C, and it has a low gate capacitance, low input capacitance and low on-resistance.

The specific data is subject to PDF, and the above content is for reference

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