IRF7401TRPBF Allicdata Electronics

IRF7401TRPBF Discrete Semiconductor Products

Allicdata Part #:

IRF7401PBFTR-ND

Manufacturer Part#:

IRF7401TRPBF

Price: $ 0.18
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 20V 8.7A 8-SOIC
More Detail: N-Channel 20V 8.7A (Ta) 2.5W (Ta) Surface Mount 8-...
DataSheet: IRF7401TRPBF datasheetIRF7401TRPBF Datasheet/PDF
Quantity: 1000
1 +: $ 0.17600
10 +: $ 0.17072
100 +: $ 0.16720
1000 +: $ 0.16368
10000 +: $ 0.15840
Stock 1000Can Ship Immediately
$ 0.18
Specifications
Vgs(th) (Max) @ Id: 700mV @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 22 mOhm @ 4.1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IRF7401TRPBF is an N-Channel enhancement mode MOSFET, specifically designed to replace power BJT transistors. The IRF7401TRPBF is designed to operate across a broad range of current, voltage, and temperature conditions, making it an ideal device for widespread application scenarios. With its low on-state resistance, wide range of drain current and drain-source voltage ratings, and low threshold voltage, IRF7401TRPBF is an excellent choice for a wide array of power management applications.

The IRF7401TRPBF exhibits excellent thermal performance, thanks to its low-profile TO-252AA package which helps to reduce the overall package size, and hence reduce the thermal resistance and increase the heat dissipation within the circuit. Furthermore, the high-gain-bandwidth ratio of the device allows for better efficiency in high frequency switching applications.

In addition to its unique advantages, the IRF7401TRPBF also has superior electrostatic discharge (ESD) protection, withstanding up to 2kV of ESD protection, allowing for maximum reliability and life expectancy. In addition, the IRF7401TRPBF is designed to operate at low on resistance with low input leakage current, making it suitable for high-impedance circuits.

The IRF7401TRPBF is mainly used in the consumer electronics industry, such as smartphones and laptops, due to its low on-state resistance and excellent thermal performance. In addition, the device is also widely used in heavy loads, such as industrial drives and high-power amplifier circuits, as it is capable of handling high sustained voltage and current.

In terms of its operating principle, the IRF7401TRPBF works in an enhancement mode. In enhancement mode, a grid bias is applied to the gate of the FET, which causes a current flow from the source to the drain, thus allowing the FET to conduct. The FET can be switched off by removing the gate voltage, thus preventing any current from flowing. This allows the device to be used for a wide range of power management applications.

The IRF7401TRPBF is a versatile and highly efficient device that is capable of providing superior performance in a wide range of applications. Thanks to its low on-state resistance, wide range of drain current and drain-source voltage ratings, and high ESD protection, the IRF7401TRPBF is the perfect solution for high-power management applications.

The specific data is subject to PDF, and the above content is for reference

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