IRF7241 Allicdata Electronics
Allicdata Part #:

IRF7241-ND

Manufacturer Part#:

IRF7241

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 40V 6.2A 8-SOIC
More Detail: P-Channel 40V 6.2A (Ta) 2.5W (Ta) Surface Mount 8-...
DataSheet: IRF7241 datasheetIRF7241 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3220pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 41 mOhm @ 6.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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<pre>IRF7241 is an enhancement-mode vertical DMOS FET (V-DMOSFET) that is specially designed to handle high-current, low voltage applications. It is commonly used in applications related to motor control, e.g. servo control, lighting, solar energy and industrial equipment. It is one of the most popular V-DMOSFETs on the market for high-current applications and is available in a TO-220 package.The IRF7241 is a high-current transistor that is capable of handling up to 5A of continuous current. It also has a low on-resistance of 5Ω, allowing it to efficiently handle high-current applications. It is also capable of switching at high speeds, with a typical switching time of 10ns. Additionally, it features a thermal resistance of just 0.8°C/W, keeping it cool even when handling high-current applications.The IRF7241 is a vertical DMOSFET, which means that it is a vertical structure in which the gate and the source are insulated by a gate oxide, while the drain and the gate are connected directly. This structure is highly efficient and allows the transistor’s power losses to be drastically reduced compared to conventional FETs.The operation of the IRF7241 is relatively simple. When a voltage is applied to the gate of the transistor, a small amount of current is drawn into the gate. This creates an electric field, which attracts electrons and holes into the gate, allowing current to flow from the source to the drain. The length of the channel, the amount of current that can flow through it, and the speed at which it can switch, are all determined by the voltage applied to the gate.Overall, the IRF7241 is a powerhouse of a V-DMOSFET that can handle high-current applications while keeping low losses and switching times. It is an ideal choice for applications related to motor control, lighting, and solar energy. </pre>

The specific data is subject to PDF, and the above content is for reference

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