IRF7350TRPBF Allicdata Electronics
Allicdata Part #:

IRF7350TRPBFTR-ND

Manufacturer Part#:

IRF7350TRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N/P-CH 100V 2.1A 8-SOIC
More Detail: Mosfet Array N and P-Channel 100V 2.1A, 1.5A 2W Su...
DataSheet: IRF7350TRPBF datasheetIRF7350TRPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Base Part Number: IRF7350PBF
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 210 mOhm @ 2.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A, 1.5A
Drain to Source Voltage (Vdss): 100V
FET Feature: Standard
FET Type: N and P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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IRF7350TRPBF is a type of MOSFET array manufactured by International Rectifier. It is an 18-V Single Enhanced Low On-Resistance. It has an operating range of -55°C to +150°C and a maximum drain-source voltage of 18V with a maximum drain current of 85A. The device is constructed with a high-thermal conductivity, high dielectric withstanding voltage, and an RDS (on) at 10V of 0.0054ohms.

The application field of IRF7350TRPBF includes motor control, load switch, and DC to DC converter applications. It is also used in power sources, power supplies, motor drives, and motor control applications. Additionally, it is used in the automotive industry for applications such as hybrid electric vehicles, fuel cell drives, and vehicle body electronics.

The working principle of IRF7350TRPBF is based on the MOSFET array design, which consists of nine MOSFET die in a single 8x8mm package. Each MOSFET die is composed of two N-channel power MOSFETs, each with integrated gate-source and secondary level protection diodes. The nine MOSFETs are arranged in a sine-wave pattern, which provides a low gate-charge and excellent diode reverse recovery characteristics.

The IRF7350TRPBF features a unique ‘Single Enhanced Low On-Resistance’ technology which combines both low on-resistance and low capacitance characteristics to provide superior field operation. This technology utilizes source-gated training to reduce reverse recovery times by as much as 50%, as well as providing improved gate drive efficiency. Additionally, the device offers low thermal resistance and enhanced drain-source breakdown voltage.

In terms of its safety features, the IRF7350TRPBF device is equipped with secondary level protection diodes, which help to protect against fault current and improve the device’s performance. Furthermore, it is designed with Smart Gate Drive™ technology to provide protection against short-circuiting, over-voltage, and over-temperature conditions.

In conclusion, IRF7350TRPBF is a highly efficient and reliable MOSFET array device, offering superior performance and excellent protection capabilities. It is suitable for applications such as motor control, load switching, and DC to DC converter applications, and is a cost-effective alternative to conventional power devices.

The specific data is subject to PDF, and the above content is for reference

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