| Allicdata Part #: | IRF730STRR-ND |
| Manufacturer Part#: |
IRF730STRR |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 400V 5.5A D2PAK |
| More Detail: | N-Channel 400V 5.5A (Tc) 3.1W (Ta), 74W (Tc) Surfa... |
| DataSheet: | IRF730STRR Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3.1W (Ta), 74W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 700pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 1 Ohm @ 3.3A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 5.5A (Tc) |
| Drain to Source Voltage (Vdss): | 400V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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IRF730STRR is one of the single power MOSFETs released by International Rectifier (IR). This type of MOSFET is characterized as 800V, 30A, and 13.5mΩ. It comes in a TO-220AB package, making it suitable for use in space-constrained applications. IRF730STRR products have been widely used in various fields such as server power, automotive, consumer electronics and robotics, as they offer high performance and consistent quality.
The working principle of the IRF730STRR lies in the formation of an insulated gate field effect transistor (IGFET) by three semiconductor regions on a single chip, including a source, a drain and a gate. The electrons traveling through the device rely on an electric field created by the gate and the drain-source voltage. With the correct voltage applied to the gate, current can pass from the source to the drain through an inverted region known as an inversion layer. This current can be increased or decreased by adjusting the applied gate voltage.
The current flow in the MOSFET device is heavily related to the application of the gate voltage. When a negative voltage is applied to the gate, a depletion layer is created between the source and drain that disrupts current flow. When a positive voltage is applied, the depletion layer narrows, allowing for current to flow in the form of an inverted region. This mechanism is responsible for the MOSFET\'s ability to act as a switch or amplifier.
The IRF730STRR has a wide range of applications, from home appliances to industrial electronics, depending on its usage in the design. For motor control applications, such as H-bridge or other similar designs, the IRF730STRR allows the motor to be controlled using pulse width modulation, allowing for precise and smooth speed control. In addition, it can also be utilized in voltage regulation, allowing for lower quiescent current and higher efficiency. In switching applications, the IRF730STRR can be used to control lighting and other home appliances, as well as audio signals.
Overall, the IRF730STRR is a highly versatile and efficient single MOSFET which can be utilized in a wide range of application fields. It provides improved performance, low on-resistance, and is suitable for a wide range of operating temperatures, making it ideal for use in a number of different environments.
The specific data is subject to PDF, and the above content is for reference
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IRF730STRR Datasheet/PDF