IRF730STRR Allicdata Electronics
Allicdata Part #:

IRF730STRR-ND

Manufacturer Part#:

IRF730STRR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 400V 5.5A D2PAK
More Detail: N-Channel 400V 5.5A (Tc) 3.1W (Ta), 74W (Tc) Surfa...
DataSheet: IRF730STRR datasheetIRF730STRR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IRF730STRR is one of the single power MOSFETs released by International Rectifier (IR). This type of MOSFET is characterized as 800V, 30A, and 13.5mΩ. It comes in a TO-220AB package, making it suitable for use in space-constrained applications. IRF730STRR products have been widely used in various fields such as server power, automotive, consumer electronics and robotics, as they offer high performance and consistent quality.

The working principle of the IRF730STRR lies in the formation of an insulated gate field effect transistor (IGFET) by three semiconductor regions on a single chip, including a source, a drain and a gate. The electrons traveling through the device rely on an electric field created by the gate and the drain-source voltage. With the correct voltage applied to the gate, current can pass from the source to the drain through an inverted region known as an inversion layer. This current can be increased or decreased by adjusting the applied gate voltage.

The current flow in the MOSFET device is heavily related to the application of the gate voltage. When a negative voltage is applied to the gate, a depletion layer is created between the source and drain that disrupts current flow. When a positive voltage is applied, the depletion layer narrows, allowing for current to flow in the form of an inverted region. This mechanism is responsible for the MOSFET\'s ability to act as a switch or amplifier.

The IRF730STRR has a wide range of applications, from home appliances to industrial electronics, depending on its usage in the design. For motor control applications, such as H-bridge or other similar designs, the IRF730STRR allows the motor to be controlled using pulse width modulation, allowing for precise and smooth speed control. In addition, it can also be utilized in voltage regulation, allowing for lower quiescent current and higher efficiency. In switching applications, the IRF730STRR can be used to control lighting and other home appliances, as well as audio signals.

Overall, the IRF730STRR is a highly versatile and efficient single MOSFET which can be utilized in a wide range of application fields. It provides improved performance, low on-resistance, and is suitable for a wide range of operating temperatures, making it ideal for use in a number of different environments.

The specific data is subject to PDF, and the above content is for reference

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