Allicdata Part #: | IRF7457TR-ND |
Manufacturer Part#: |
IRF7457TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 15A 8-SOIC |
More Detail: | N-Channel 20V 15A (Ta) 2.5W (Ta) Surface Mount 8-S... |
DataSheet: | IRF7457TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3100pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 42nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 7 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IRF7457TR is a general purpose, medium voltage, N-channel MOSFET transistor designed specifically for low voltage high speed switching applications in the consumer, industrial, and automotive markets. It is designed to handle a 5V gate drive, making it ideal for controlling lower voltage, higher speed switching. The IRF7457TR uses advanced trench MOSFET technology to provide excellent RDS(on) and design flexibility for applications that need higher switching speeds, improved conduction efficiency, and enhanced system reliability.
The IRF7457TR has four important features that contribute to its superior performance: a standard independent RDS(on) , an integrated thermal shutdown protection, positive temperature coefficient to reduce RDS(on) , and a built-in current sense resistance. These features provide a wide range of application fields, from automotive and industrial to consumer applications.
The IRF7457TR’s working principle is based on MOSFET (Metal Oxide Semiconductor Field Effect Transistor) technology. In this technology, a thin layer of oxide insulation separates a source and drain region from the “gate”, which is the control voltage that determines the resistance between these two regions. As the gate voltage increases, the resistance between the source and drain decreases. This is what allows current to “flow” through the device. The IRF7457TR is designed to be a very low “on-resistance” (RDS(on) ) device, which allows current to flow very efficiently at higher switching speeds.
The IRF7457TR is suitable for use in a variety of applications, including power management and switching, industrial, automotive, audio, and computer systems. It is capable of supporting low voltage (5V) as well as high frequency switching at frequencies of up to 50kHz, making it well suited for high speed applications. Additionally, the IRF7457TR’s positive temperature coefficient reduces the on-resistance in the presence of rising temperatures, allowing for better efficiency and heat dissipation.
The IRF7457TR is an excellent option for low voltage, high speed switching applications in a wide range of markets. Its superior on-resistance and integrated thermal shutdown protection allow for exceptional efficiency and reliability without compromising speed. Its advanced trench MOSFET technology reduces switching losses, providing improved conduction efficiency and system reliability.
The specific data is subject to PDF, and the above content is for reference
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