Allicdata Part #: | IRF7752-ND |
Manufacturer Part#: |
IRF7752 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2N-CH 30V 4.6A 8-TSSOP |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 4.6A 1W Surfac... |
DataSheet: | IRF7752 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 4.6A |
Rds On (Max) @ Id, Vgs: | 30 mOhm @ 4.6A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 9nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 861pF @ 25V |
Power - Max: | 1W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: | 8-TSSOP |
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IRF7752 is a power semiconductor device that is the array of two quasi- complementary N- and P-channel enhancement-mode MOSFETs. IRF7752 has a great deal of applications in both digital and analog circuits; it is one of the most common devices when it comes to analog and digital computing.
IRF7752 is used in a wide range of applications as it provides reliable, robust and efficient power management systems. The MOSFETs used in the array are DMOS transistors, and the two transistors are connected together in an array that provides high current carrying capacity and power efficiency.
IRF7752 has a low On-Resistance and is used in many analog and digital circuits such as power supply, audio amplifiers, AGC and DC/DC converters. It is also used in frequency converters and power converters, power filters and switching power supplies. IRF7752 is also used in the power management application, pulse width modulation circuits, power amplifier engineering and power control applications.
IRF7752 is a very popular device as it provides efficient and low On-Resistance performance. The N-channel MOSFETs are used to drive high-side loads, while the P-channel MOSFETs are used to drive low-side loads. IRF7752 has a high-frequency switching capability, meaning it has low power dissipation and can switch very quickly.
IRF7752 is a very robust device and has good thermal stability. It is also very cost-effective, meaning it is easy to replace and replaceable parts are available. IRF7752 is a very good choice when it comes to power management applications as it offers high efficiency and reliability.
As far as the working principle of IRF7752 is concerned, it can be explained as follows. When N-channel MOSFETs are used to drive high-side loads and P-channel MOSFETs are used to drive low-side loads, then the IRF7752 array provides an efficient electrical connection between the loads.
The transistors used in the IRF7752 array have gate-controlled On-Resistance and gate-controlled reverse blocking capabilities. This allows the IRF7752 array to be two-way bidirectional operation for efficient power transfer between the loads.
The process of power transfer from one side of the IRF7752 array to the other side is very simple. At one end of the array, the power is supplied by the input voltage and is then transferred through the transistors to the output side, where the power is dissipated.
The IRF7752 array can also provide a better power regulation for audio and digital applications. The array is also used in frequency converters and switching power supplies. In these applications, the array ensures that the signal is correctly transferred between the input and the output voltages.
In conclusion, the IRF7752 array is a very reliable and efficient power semiconductor device and has a wide range of applications. It provides efficient power management and is used in many analog and digital circuits. The array is also very robust and can handle high power and frequency switching applications.
The specific data is subject to PDF, and the above content is for reference
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