IRF730STRL Allicdata Electronics
Allicdata Part #:

IRF730STRL-ND

Manufacturer Part#:

IRF730STRL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 400V 5.5A D2PAK
More Detail: N-Channel 400V 5.5A (Tc) 3.1W (Ta), 74W (Tc) Surfa...
DataSheet: IRF730STRL datasheetIRF730STRL Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IRF730STRL is a type of field effect transistor (FET) commonly used in a variety of applications. Its small size and high efficiency compared to other types of FETs make it well suited for many types of electronic circuits. It is a single channel, N-channel depletion-mode type of FET, meaning it is normally off, and is used as a switch. It is mainly used for power-electronic applications due to its robustness and reliability.

In general, FETs are transistors that use an electric field to control current flow. The term comes from the fact that the electric field forms a “field” between two conducting surfaces. It is a type of semiconductor device similar to a bipolar junction transistor (BJT). The main difference is that FETs use charge carriers such as electrons or holes to create their electric field, while BJTs use majority and minority carriers to do so. FETs have a higher resistance than BJTs, making them ideal for switching applications.

The IRF730STRL’s specific construction consists of an active N-type MOSFET connected to a control gate, and also to a drain and source. The gate is used to control the flow of electrons between the source and drain, depending on the voltage applied to the gate. When the gate voltage is positive, the channel will be open, allowing current to flow between the source and drain. When the gate voltage is negative, the channel will be closed, preventing current flow.

The IRF730STRL can be used in a wide variety of applications, such as motor control, lighting dimmers, or switching power supplies. Its low “on” resistance of 0.07 ohm, coupled with its high current rating of 63A, makes it well suited for applications that require high-performance power control. It is also well suited for applications where a low voltage drop is desired, such as lighting dimmers.

One of the main advantages of the IRF730STRL is its ability to handle high peak currents and its low Gate-source capacitance. This makes it well suited for use in high-speed switching applications. The low capacitance reduces switching losses, and the device’s fast switching speeds make it well suited for high speed and high frequency applications.

The IRF730STRL is a practical and cost-effective solution for a variety of applications. Its low on-resistance, high current ratings, and low Gate-source capacitance make it well suited for a wide variety of applications. Its small size and easy handling also make it suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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