| Allicdata Part #: | IRF7350PBF-ND |
| Manufacturer Part#: |
IRF7350PBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N/P-CH 100V 8SOIC |
| More Detail: | Mosfet Array N and P-Channel 100V 2.1A, 1.5A 2W Su... |
| DataSheet: | IRF7350PBF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Base Part Number: | IRF7350PBF |
| Supplier Device Package: | 8-SO |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power - Max: | 2W |
| Input Capacitance (Ciss) (Max) @ Vds: | 380pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 210 mOhm @ 2.1A, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 2.1A, 1.5A |
| Drain to Source Voltage (Vdss): | 100V |
| FET Feature: | Standard |
| FET Type: | N and P-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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IRF7350PBF is a high voltage P-Channel MOSFET transistors array developed by Infineon Technologies. It is an array of MOSFETs that works at high voltage, providing high reliability and efficiency. The device is designed primarily for power switching applications and is ideal for off-line switching applications such as hulse-width-modulated DC-DC converters, high current power switches, and power FETs applications. The device features a maximum voltage rating of 20V and a drain current rating of 5A.
The IRF7350PBF provides very efficient performance with a very low gate-source threshold voltage of 0.4V. This device is able to achieve a high level of performance despite its relatively small size, with a small gate length and width of just 0.65mm and 0.25mm, respectively. It also has a maximum drain-source on-resistance of 0.07ohms, which results in less power dissipation and improved efficiency of the power switching application.
The IRF7350PBF is an ideal device for applications such as controller power switches, bridge rectifiers, and automotive power systems. The device\'s fast switching characteristics provide an optimal turn-on and turn-off time, while its high peak current rating ensures smooth, reliable performance in even the toughest of power switching applications.
The working principle of the IRF7350PBF is very straightforward. When the gate voltage of the device is increased, the gate voltage creates a depletion zone in the semiconductor material, resulting in a decreased drain current. When the gate voltage is decreased, however, the depletion zone decreases, resulting in an increased drain current. Thus, by controlling the gate voltage, the device can be accurately and precisely operated.
In addition, the IRF7350PBF also has two power supply pins, allowing it to be operated from both an AC and DC source. This makes it an excellent choice for applications in both AC and DC circuits, such as motor control, and other high-voltage switching applications. The device also has an ESD capability of ±15kV (HBM), making it capable of withstanding high voltages in harsh environments.
The IRF7350PBF is a great option for those looking for a combination of low power dissipation, high-voltage capabilities, and fast switching characteristics. It is ideal for high-power, high-reliability, and high-efficiency applications, and can be used in a variety of applications due to its versatile features. Whether you need a high-voltage switch for your DC-DC converter, a power supply switch, or a bridge rectifier, the IRF7350PBF is a great option.
The specific data is subject to PDF, and the above content is for reference
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IRF7350PBF Datasheet/PDF