IRF7413Z

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IRF7413Z is a type of single n-channel enhancement mode power field effect transistor (FET) that has been specifically designed for applications in the power management and power switching areas of industry. It is a part of a larger family of FETs from the same company, Interfet. It is a 3-pin integrated circuit (IC) with an operating frequency range of up to 100 kHz. The main features of the IRF7413Z include: low drain-source on resistance (RDS ON), high transconductance (gm) and low gate charge (QG).

One of the main application areas for the IRF7413Z is power switching applications, such as motor control, power supply design, power conditioning, and power-on/off control. It is also suitable for use as a power switch in a wide range of automotive applications, including hybrid electric (HEV) and fuel-cell vehicles. In addition, the IRF7413Z can be used in audio amplifiers and other audio-related applications.

The working principle of the IRF7413Z is based on the enhancement-mode field-effect transistor (FET). In an enhancement-mode FET, a voltage bias is applied to the gate of the device such that the FET behaves as if it were a normally-on switch when power is supplied. This causes current to flow from the drain to the source. The voltage drop across the FET is called the drain-source on resistance (RDS ON). The higher the RDS ON, the higher the power losses associated with the transistor.

The IRF7413Z has an on resistance of 2.5 Ohms, which is relatively low compared to other FETs. It also has a transconductance of up to 545 mS and a gate charge of just 13 nC. This low gate charge ensures that the device does not need to be activated for long periods of time in order to maintain its operation, making it suitable for use in applications where fast switching times are required. In addition, the low on resistance and high transconductance provide the device with excellent power-switching characteristics.

In summary, the IRF7413Z is a single n-channel FET that is specifically designed for use in power switching and power management applications. It has an on resistance of 2.5 Ohms, a high transconductance of up to 545 mS and a low gate charge of just 13 nC. This makes it suitable for use in a wide range of automotive, audio, and power switching applications.

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