IRF7105PBF Allicdata Electronics
Allicdata Part #:

IRF7105PBF-ND

Manufacturer Part#:

IRF7105PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N/P-CH 25V 8-SOIC
More Detail: Mosfet Array N and P-Channel 25V 3.5A, 2.3A 2W Sur...
DataSheet: IRF7105PBF datasheetIRF7105PBF Datasheet/PDF
Quantity: 3723
Stock 3723Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Base Part Number: IRF7105PBF
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 100 mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A
Drain to Source Voltage (Vdss): 25V
FET Feature: Standard
FET Type: N and P-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tube 
Description

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The IRF7105PBF is a high-voltage, high-speed power MOSFET transistor array designed for applications such as power conversion, industrial motor control, and audio amplification. It consists of two P-channel enhancement-mode MOSFETs arranged in a single dual-in-line PACKAGE (DIP). The IRF7105PBF is characterized by low on-state resistance and fast switching speeds, making it ideal for power management and conversion applications.

The IRF7105PBF is designed to withstand high voltage levels and operate at high speeds while consuming minimal power. It is capable of sustaining up to 500 volts of drain-source voltage and have a maximum drain-source current rating of 6.5 amperes. It is also able to switch at speeds of up to 10MHz and dissipate power up to 250 mW.

The IRF7105PBF works by allowing a current in the gate irrespective of the polarity of the gate and drain source voltages. This is because the gate of the MOSFET is always connected to the source voltage and the drain voltage. Thus, when a voltage is applied to the gate, the drain can charge to a greater potential than the source, which is known as forward-biased gate voltage.

The IRF7105PBF also features two pins that are used for logic control. The logic pins of the transistor allow the user to control the signal level at the output of the transistor in order to provide control signals for other components that may be connected in the circuit.

In terms of its application field, the IRF7105PBF can be used for power conversion, industrial motor control, and even audio amplification. It is ideal for applications where high voltage and high speed are needed, such as in the field of robotics and automation. The low RDS ON and fast switching speeds of the IRF7105PBF make it suitable for applications where power management and power conversion are necessary.

The IRF7105PBF is a great device for applications that require high voltage and high speed, as well as low power consumption. The integrated logic pins and fast switching speeds make it highly efficient for power management and conversion applications. The IRF7105PBF’s ability to accept large drain-source voltage levels and current also make it a great option for audio amplification and industrial motor control applications.

The specific data is subject to PDF, and the above content is for reference

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