IRF7811A Allicdata Electronics
Allicdata Part #:

IRF7811A-ND

Manufacturer Part#:

IRF7811A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 28V 11.4A 8-SOIC
More Detail: N-Channel 28V 11A (Ta) 2.5W (Ta) Surface Mount 8-S...
DataSheet: IRF7811A datasheetIRF7811A Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1760pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 10 mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drain to Source Voltage (Vdss): 28V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRF7811A is a type of single N-Channel MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor). It is designed to provide high performance and superior reliability in a variety of applications. The MOSFET has a variety of features, including low on-state resistance, low gate charge, and fast switching speed. These features make the IRF7811A ideal for switching and amplifying current in many applications.

The IRF7811A operates using an N-channel MOS transistor structure. It consists of a gate, body, drain, and source terminals. The operation of the MOSFET is based on the principle of depletion mode. In this principle, the gate can be used to control the source-drain current. By applying a positive gate voltage, the channel current is increased, allowing more current to flow through the drain and source regions. Conversely, by applying a negative gate voltage, the channel current is decreased, resulting in less current flow.

The IRF7811A is primarily used for power switching applications. It is also used for switching analogue and digital signals in amplifiers and signal level converters. Its low on-state resistance, high drain surge current, and fast switching speed make it an ideal choice for applications where high power and fast response times are required. It can also be used for current regulation applications such as motor controllers and voltage regulators.

In addition to the applications mentioned above, the IRF7811A can also be used in many other applications. It can be used in power supply circuits to provide gate protection and prevent excessive current flow. It is also useful in snubber circuits and DC-DC converters to control current flow. Additionally, the IRF7811A is well suited for high frequency switching applications such as inverters, switching regulators, and power amplifiers.

The IRF7811A is easy to use, reliable, and requires little power. It has a very low gate charge, which makes it compatible with many different digital logic levels. Additionally, the device has very low switching losses and is capable of handling high pulse currents in many applications. The device is also well suited for high-side and low-side switching applications and also provides protection against gate-source and gate-drain transients.

The IRF7811A can also be used for controlling light loads in AC-DC motor control, chopper, and dimmer circuits. It is also used for controlling motors in robotic or automotive applications. Additionally, this device is capable of controlling both DC and AC-powered light bulbs. The IRF7811A is also frequently used to control small fans and pumps in home appliances, office electronics, and toys.

To conclude, the IRF7811A is a type of single N-Channel MOSFET with a variety of features. It is primarily used for power switching applications and is also used for current regulation and controlling light loads. Its low on-state resistance, high drain surge current, low gate charge, and fast switching speed make it an ideal choice for many applications where high power and fast response times are required.

The specific data is subject to PDF, and the above content is for reference

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