Allicdata Part #: | IRF7530TR-ND |
Manufacturer Part#: |
IRF7530TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2N-CH 20V 5.4A MICRO8 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 5.4A 1.3W Surf... |
DataSheet: | IRF7530TR Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
Base Part Number: | IRF7530 |
Supplier Device Package: | Micro8™ |
Package / Case: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 1.3W |
Input Capacitance (Ciss) (Max) @ Vds: | 1310pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 30 mOhm @ 5.4A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 5.4A |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Standard |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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IRF7530TR is a type of Insulated Gate Bipolar Transistor (IGBT) array containing two IGBTs. It is a power semiconductor device used in medium to high power switching and switching applications. This device can be used in a variety of areas from home appliances to power train control. It is manufactured by International Rectifier Corporation.
This device has several applications in the electric and power supply sector. Its main application is used in the electric power transmission system. It can also be used in industrial process automation and in efficient energy conversion. It can also be used in power supplies and in automotive electronic systems. This device is able to deliver high-speed switching, low voltage drop, low switching losses and robustness.
The IRF7530TR device consists of two IGBTs (Insulated Gate Bipolar Transistor) each with a collector, emitter and gate. The IGBTs are connected in parallel with each other with their drain pins connected to the power train. The Gate of each IGBT receives the conduction signal which is provided to them by the gate driver. The Gate driver amplifies the conduction signal and provides sufficient drive capability for the IGBT. The device also has an internal diode connected in anti-parallel with the IGBT for reverse-bias protection.
The working principle of the IRF7530TR is that of an IGBT array. The IGBTs are normally in the off state and are turned on or off based on the input signal that is transmitted to their Gate pin. When the input signal is high, the Gate will turn on the IGBT, allowing current to flow through the circuit. When the input signal is low, the Gate will turn off the IGBT, preventing current from flowing through the circuit.
The IRF7530TR device is manufactured with a technology known as Insulated Gate Bipolar Transistor array. This technology enables the device to control a higher number of switching operations at a faster rate with low losses. The IGBTs provide high power switching, improved efficiency and better control compared to other types of semiconductor switches. In addition, this device also offers high stability and reliability for long-term use.
In conclusion, the IRF7530TR is a type of Insulated Gate Bipolar Transistor array that is useful in a variety of areas from home appliances to power train control. This device is able to deliver high-speed switching, low voltage drop, low switching losses and robustness. The device consists of two IGBTs with their Gate receiving a conduction signal from the gate driver. The working principle of the device is that of an IGBT array which turns on and off based on an input signal. This device is manufactured with a technology called Insulated Gate Bipolar Transistor array which enables faster switching operations and improved efficiency. In addition, this device is highly reliable and is suitable for long-term use.
The specific data is subject to PDF, and the above content is for reference
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