IRF7805A Allicdata Electronics
Allicdata Part #:

IRF7805A-ND

Manufacturer Part#:

IRF7805A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 13A 8-SOIC
More Detail: N-Channel 30V 13A (Ta) 2.5W (Ta) Surface Mount 8-S...
DataSheet: IRF7805A datasheetIRF7805A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 11 mOhm @ 7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRF7805A is a N-Channel power MOSFET with a small gate-to-drain capacitance and low on-state resistance. This device is a self-protected, environment-friendly MOSFET that is suitable for use in a variety of applications from topology power supply to automotive applications. Its wide voltage tolerance and great resistance to electro-thermal transients are the key features of the IRF7805A.

The IRF7805A is a single MOSFET with a drain-source voltage of 30 volts. It features a drain current rating of 10A, a drain-source on-state resistance of 15.5 milliohms, and a gate-source breakdown voltage of 8 volts. The gate-drain capacitance is very small at 3-5 pF.

In the MOSFET architecture, the gate is insulated from the drain by a very thin oxide layer that acts as a gate oxide layer. When voltage is applied to the gate, the electrons from the gate interact with the oxide layer, forming an inversion layer in the drain. Current flow is then enabled through the MOSFET channel depending on the voltage applied to the gate. Thus, this type of MOSFET can be used as a switch to control the flow of current from a power source to the load.

The IRF7805A is ideal for applications that involve sensing, switching, and driving loads. It can be used as a switch to control the flow of current in a circuit. For example, it can be used in a switching power supply, where it can be used to switch off or on the power supply, thus providing an efficient power supply solution. In automotive applications, it can be used as a switch to control the flow of current in a vehicle; the IRF7805A helps to ensure that the vehicle electronics are protected from voltage spikes and other issues.

The IRF7805A also has very good electro-thermal transients features, which make it suitable for use in outdoor and industrial applications. The device is protected from surge and current spikes that can occur in these environments. Moreover, the device supports over-voltage and over-current protection. This is important for applications that require reliable and consistent performance.

In summary, the IRF7805A is an efficient and reliable single MOSFET device with a small gate-to-drain capacitance and low on-state resistance. It is suitable for use in a variety of applications, ranging from topology power supplies to automotive applications. Its features, such as its wide voltage tolerance and great resistance to electro-thermal transients, make it a great choice for applications that require reliable and consistent performance.

The specific data is subject to PDF, and the above content is for reference

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