IRF7331PBF Allicdata Electronics
Allicdata Part #:

IRF7331PBF-ND

Manufacturer Part#:

IRF7331PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET 2N-CH 20V 7A 8-SOIC
More Detail: Mosfet Array 2 N-Channel (Dual) 20V 7A 2W Surface ...
DataSheet: IRF7331PBF datasheetIRF7331PBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Base Part Number: IRF7331PBF
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 16V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Discontinued at Digi-Key
Packaging: Tube 
Description

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IRF7331PBF is a kind of Field-effect transistor (FET) array designed for use in low voltage analog and digital applications. It is a general purpose MOSFET device, an ideal way of providing controlled high-side switching with capacitor-coupled low-side switch-off. Typically it is used in applications such as DC-DC converting, motor control and switching circuits.

The IRF7331PBF is composed of two N-channel MOSFETs with logic level-compatible gate drive and a common source connected drain. The device is also package with a TO-251 body in an 8-lead plastic package. Its drain and the source share common connection and thus the device can be driven by an isolated TTL or CMOS logic input.

IRF7331PBF is simple and powerful. It can be used in high side switching applications as the source can be connected to any convenient supply voltage in the range of 12~65V. All the pins are easily accessible and can be used without any external components.

At the heart of the IRF7331PBF is a common source N-channel MOSFET which has two gates. The top gate is used for switching the source connection to the supply voltage and the bottom gate is used for switching the drain connection. This device is capable of very low on-resistance, high switching speed and large load current handling capability.

Since the IRF7331PBF is an isolated device, its working depends on the capacitance between the gates and the drain. When the top gate is high, the MOSFET is turned on, its source is connected to the supply voltage and current flows through the drain. When the bottom gate is low, the MOSFET is turned off and its drain is disconnected from the source.

In terms of application fields, the IRF7331PBF can be used in a wide range of applications such as DC-DC converting, motor control, switching circuits,linear and low dropout regulating circuits. It can switch currents up to 6A with low on-state resistance, high switching speeds and capable of operating in a wide range of ambient temperatures from -65°C to +150°C.

In conclusion, the IRF7331PBF is a versatile N-channel MOSFET array which can be used in a variety of low-voltage analog and digital applications. Its isolated structure, low on-resistance and wide operating temperature range make it ideal for high-side switching applications.

The specific data is subject to PDF, and the above content is for reference

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