Allicdata Part #: | IRF7379QTRPBFCT-ND |
Manufacturer Part#: |
IRF7379QTRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N/P-CH 30V 8-SOIC |
More Detail: | Mosfet Array N and P-Channel 30V 5.8A, 4.3A 2.5W S... |
DataSheet: | IRF7379QTRPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Base Part Number: | IRF7379QPBF |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 2.5W |
Input Capacitance (Ciss) (Max) @ Vds: | 520pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 45 mOhm @ 5.8A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.8A, 4.3A |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Logic Level Gate |
FET Type: | N and P-Channel |
Part Status: | Obsolete |
Packaging: | Cut Tape (CT) |
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The IRF7379QTRPBF is an array of MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) that is used in a wide variety of applications.
These MOSFETs are composed of a source, gate and drain and have characteristics such as low power consumption, high operation speed, high output current and high input impedance. Because of these characteristics, they are ideal for linear applications, power supply circuits and power switching. They are also used in driver circuits and RF applications.
The IRF7379QTRPBF has a wide range of operating voltage from 10 volts to 20 volts. This makes it suitable for various applications and it can also be used in systems with high power requirements, such as medical equipment, communications systems and computers.
The IRF7379QTRPBF also has a very low on-resistance, which is the amount of resistance that is measured when a voltage is applied to the gate. This low resistance allows for a high current, allowing for better performance when high currents are required. In addition, the IRF7379QTRPBF also has a very low leakage current, which is the amount of current that flows in the circuit even when no voltage is applied.
The IRF7379QTRPBF is able to operate at a wide range of frequencies, ranging from 10kHz to several hundred MHz. This makes them ideal for radio-frequency applications, as they are able to respond quickly to changes in the frequency. In addition to this, the IRF7379QTRPBF is also able to operate over a wide range of temperatures, from -55°C to 150°C.
The working principle of the IRF7379QTRPBF is based on the MOSFET structure. When a voltage is applied to the gate, it forms a depletion layer in the channel. This depletion layer is negatively charged, and it acts like a barrier which restricts current flow. By controlling the voltage applied to the gate, it is possible to control the amount of current that flows through the channel.
The IRF7379QTRPBF can be used in a variety of applications, ranging from power supply circuits and power switching, to driver circuits and RF applications. In addition to this, it can also be used in medical equipment, communications systems and computers. In all of these applications, it is important to ensure that proper operating conditions are maintained, as proper operating conditions are essential for the proper functioning of the IC.
The specific data is subject to PDF, and the above content is for reference
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