IRF7102 Allicdata Electronics
Allicdata Part #:

IRF7102-ND

Manufacturer Part#:

IRF7102

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET 2N-CH 50V 2A 8-SOIC
More Detail: Mosfet Array 2 N-Channel (Dual) 50V 2A 2W Surface ...
DataSheet: IRF7102 datasheetIRF7102 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: HEXFET®
Packaging: Tube 
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V
Power - Max: 2W
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Description

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IRF7102 is an integrated power MOSFET array specifically designed to reduce circuit complexity and cost in low voltage, high frequency isolated DC-DC converter applications. It features high current flow and low on-resistance characteristics, making it ideal for high switching frequency and low saturation voltage in a variety of high power switching applications. The device is comprised of two power MOSFETs connected in parallel, with a high current output switch in the middle. The top MOSFET works as an active high-side switch, while the bottom MOSFET acts as a low-side switch. The MOSFETs are controlled by a pair of complementary P-channel and N-channel power MOSFETs, which provide rapid switching of the device with low gate-source capacitance and low gate-threshold voltage. The IRF7102 also features an integrated diode to facilitate the gate control and current control.

The device is designed to provide power MOSFET arrays in a compact 8-pin SOIC package for high-power circuit applications. This package has an integrated heat sink, allowing for more efficient heat dissipation during operation. The high current capability and low on-resistance provide increased system performance, while the diode and internal gate protection resistors reduce power loss during switching. The low gate capacitance of the integrated MOSFETs minimizes switching losses and reduces gate drive power requirements. The device also features a low-voltage threshold, allowing for lower voltage operations.

The working principle of the IRF7102 relies on charge transfer between the gate and source pins of the MOSFETs. When a positive voltage is applied to the gate of the top MOSFET, it allows current to flow into the drain, while a negative voltage applied to the gate of the bottom MOSFET stops current flow and turns off the device. The opposite is true of the bottom MOSFET, with a positive voltage applied to the gate, thus allowing current flow, and a negative voltage applied to the gate turns it off. When both MOSFETs are turned off, the device is off, and no current flows.

The IRF7102 is used in applications such as low-voltage, high-frequency isolated DC-DC converters, voltage regulators, charge pumps, and switch mode power supplies. Its low-voltage threshold, high current flow capability, and low on-resistance characteristics make it ideal for applications requiring high switching frequency and low saturation voltage. Its integrated diode provides additional protection against excessive current and voltage spikes, while the low gate capacitance minimizes switching losses and reduces gate drive power requirements.

The IRF7102 is an ideal choice for low voltage, high frequency applications where power MOSFETs are needed. Its high current capability and low on-resistance provide increased system performance and efficient heat dissipation during operation. The integrated diode and internal gate protection resistors reduce power loss during switching, and the low gate capacitance ensures optimal switching performance. The device is also simple to use, and its 8-pin SOIC package simplifies board layout and installation.

The specific data is subject to PDF, and the above content is for reference

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