Allicdata Part #: | IRF7104PBF-ND |
Manufacturer Part#: |
IRF7104PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2P-CH 20V 2.3A 8-SOIC |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 2.3A 2W Surfac... |
DataSheet: | IRF7104PBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Base Part Number: | IRF7104PBF |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 2W |
Input Capacitance (Ciss) (Max) @ Vds: | 290pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 250 mOhm @ 1A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.3A |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | 2 P-Channel (Dual) |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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Integrated RF7104PBF is an integrated field effect transistor (FET) and complementary metal–oxide–semiconductor (CMOS) device array available in low density (LD) small outline (SO) packages. This dual-channel FET is manufactured with high power, low noise and low voltage functions. This device is a departure from other bipolar-type FETs because of its low density and very low cost.
The IRF7104PBF is designed to offer an optimized performance/cost ratio. It is a low power, CMOS FET array with a 5-rin network and features a maximum drain current gain of 11.2-dB. It is also designed with a low noise floor for optimal operation in low power applications. This device is produced using advanced CMOS processes, and contains p-type and n-type FETs. This allows for high switching speeds without compromising noise levels.
The working principle of IRF7104PBF is based on the principle of using p-type and n-type FETs in order to control the flow of current. When the gate voltage is applied, the two FETs are connected in parallel and the current flows between them. When the requirements of a specific circuit require the current to flow through the FETs in series, the FETs can be disconnected and the current can flow in either one direction or another depending on the nature of the circuit.
The IRF7104PBF has a number of applications, including LED lighting, radar, television, radio, satellite and cable television. This device is also used in modern receivers and transmitters in order to reduce noise and provide better transmission quality. The device is also used in audio and video applications such as DVD player and other consumer electronics. The IRF7104PBF can also be used in automotive applications, such as navigation systems, audio systems and other sophisticated control systems.
IRF7104PBF is ideal for low power applications due to its 8V operating voltage, 5 rin network and its low power consumption. The device has also been effectively employed in portable electronic products, as it provides a low power, low noise level. The device is capable of performing highly reliable switching operations over time, due to its high switching speed and low noise floor.
The IRF7104PBF is a versatile, low-cost, low-power FET array. With its low current consumption and low noise level, it is suitable for a wide range of applications. Its ability to perform highly reliable switching operations over time makes it an excellent choice for low-power applications. The device is also designed with a 5-rin network that allows it to be used as a dual-channel device, increasing its versatility.
The specific data is subject to PDF, and the above content is for reference
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