Allicdata Part #: | IRF7301PBF-ND |
Manufacturer Part#: |
IRF7301PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2N-CH 20V 5.2A 8-SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 5.2A 2W Surfac... |
DataSheet: | IRF7301PBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 700mV @ 250µA |
Base Part Number: | IRF7301PBF |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 2W |
Input Capacitance (Ciss) (Max) @ Vds: | 660pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 50 mOhm @ 2.6A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 5.2A |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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IRF7301PBF is a top selling field-effect transistor (FET) array designed and manufactured to target air-like and IO interface applications. It consists of three N-Channel Depletion Mode Vertical DMOS (V-DMOS) FETs with 20V break down voltage.
With the goal of solving problems of circuit designers in providing high density switching solutions, this FET array features an ultra-low RDS(on) of 2.5R max and 17A drain current capability. This FET can handle a wide variety of load and power handling for the application.
The device is fabricated using Diffused Planar Technology, the die is co-planar passivated in order to get fast switching and enhanced on-state RDS(on). It provides controlled avalanche ruggedness with a safe operating area (SOA) curve.
The IRF7301PBF also provides a Kelvin photo source and an optional Kelvin guard source to reduce capacitive turn-on effects and guard against false triggering and EMI effects. Additionally, its robust construction helps guard against thermal stress and damage. And due to its short circuit protection design, it can be used in situations that require high reliability.
The working principle of the FET array is fairly straightforward. It makes use a gate-source voltage to control the drain current. When a positive voltage is applied to the gate, holes from the substrate and electrons from the source region of the FET inject into the channel between the source and the drain. This forms an inversion layer where the current can pass through. As the gate voltage is increased, the channel resistance decreases and greater amount of current can pass through.
The IRF7301PBF FET array offers many advantages that make it suitable for various types of applications. It provides excellent performance in noise, RF and high-frequency environments and makes it an ideal choice for a wide range of applications. It can be used in low and high power switching, automotive applications, remote control systems, medical applications, power control & switchgear, telecommunications equipment and more.
In conclusion, the IRF7301PBF is an advanced FET array designed with the goal of providing superior performance, reliability and cost-effectiveness, making it an ideal choice for a wide variety of applications. With its robust construction and impressive specifications, the IRF7301PBF provides excellent results in virtually any application and can handle high power handling and long-term reliability.
The specific data is subject to PDF, and the above content is for reference
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