
Allicdata Part #: | IRF7755TR-ND |
Manufacturer Part#: |
IRF7755TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2P-CH 20V 3.9A 8-TSSOP |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 3.9A 1W Surfac... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 3.9A |
Rds On (Max) @ Id, Vgs: | 51 mOhm @ 3.7A, 4.5V |
Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1090pF @ 15V |
Power - Max: | 1W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: | 8-TSSOP |
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IRF 7755TR Application Field and Working Principle
IRF 7755TR is a type of transistor array that has been used in electronic applications for a variety of purposes. It consists of 2 stages, each containing 5 transistors, which are connected in parallel, and connected to a common bus. The IRF 7755TR supports the power, logic, memory and communications needs of commercial, industrial, and automotive applications.
Benefits of IRF 7755TR
The IRF 7755TR offers significant advantages in terms of its performance, capacitance, power, current and temperature. It also can support digital and analog signals, and has a higher current rating than standard transistors. The IRF 7755TR also provides thermal and electrical protection for the device, including reverse-bias protection and short-circuit protection.
In addition to its high current rating and thermal protection, the IRF 7755TR offers low on-resistance and low gate charge. This combination of features helps reduce losses and increase power efficiency. The IRF 7755TR also features an ultra-low input capacitance, allowing it to operate at higher frequencies. Furthermore, its low power consumption makes it an ideal choice for battery-powered applications.
Working Principle of IRF 7755TR
The working principle of IRF 7755TR is based on field-effect transistors (FETs). The main components of an FET are the source, gate, and drain terminals. In a transistor array, the terminals are connected in parallel, and connected to a single common bus. The current is regulated by the gate voltage, which is applied to the gate terminal. When the gate voltage is high, it allows a current to flow from the source to the drain, and vice versa. As the gate voltage is lowered, the current flow is decreased. When the gate voltage reaches zero, the current flow is completely stopped.
The operation of an IRF 7755TR is based on the fact that it is an FET array that supports parallel operation. This means that each of the transistors will act independently, allowing for simultaneous switching. This allows the array to operate at higher frequencies and with high efficiency. Furthermore, the parallel operation reduces losses due to distributed capacitance and current spikes.
In addition to its high power efficiency, the IRF 7755TR also offers a high switching speed. This is due to its low gate charge, which allows it to rapidly switch on and off. The fast switching speed allows for high-speed operation, which is beneficial for applications that require fast response times.
Lastly, the IRF 7755TR offers protection against EMF and EMI. This protection is provided by the tightly coupled transistors, which help reduce interference that could affect the operation of the device. The tight coupling also prevents voltage spikes from traveling through the array, which can damage the device.
Conclusion
The IRF 7755TR is an FET array that offers high power efficiency and fast switching speed. It also features low gate charge and low on-resistance, which allow it to operate efficiently and at high frequencies. Furthermore, the IRF 7755TR offers thermal and electrical protection, as well as protection against EMF and EMI. It is an ideal device for power, logic, memory, and communications applications in commercial, industrial, and automotive fields.
The specific data is subject to PDF, and the above content is for reference
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