
Allicdata Part #: | IRF7702-ND |
Manufacturer Part#: |
IRF7702 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 12V 8A 8-TSSOP |
More Detail: | P-Channel 12V 8A (Tc) 1.5W (Tc) Surface Mount 8-TS... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: | 8-TSSOP |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3470pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 81nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 8A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
Drain to Source Voltage (Vdss): | 12V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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:The IRF7702 is an N-Channel MOSFET (metal-oxide-semiconductor field-effect transistor). This type of transistor enables an electrical signal of low intensity to control a higher power signal. It is one of the most commonly used types of transistors due to its versatility and wide range of applications.
The IRF7702 is a single-gate MOSFET, meaning it operates with a single control electrode which is connected to the semiconductor substrate. It is used in a range of applications such as switching and voltages regulated circuits, motor control, interface communication, switching power supplies, audio amplifiers, and general power management.
The working principle of the IRF7702 is based on the ability to control the flow of current between the source (S) and drain (D) by applying a voltage to its gate (G). When the voltage applied to the gate exceeds the threshold value, the MOSFET opens up a conductive channel between S and D and current flows. This is accompanied by a voltage drop proportional to the resistance of the channel.
The opening up of the channel is determined by the size of the voltage applied to the gate. A small source-gate voltage is required to activate the channel, meaning typically a low-power signal is capable of driving a high-power signal through the channel. This allows for better energy efficiency in power management, which is one of the reasons the IRF7702 has become so popular in modern electronic designs.
An important feature of the IRF7702 is its robustness. Its higher breakdown voltage and superior thermal dissipation enable it to withstand higher power levels without damage. This makes it a great choice for switching and regulated power supply applications, as it can reliably handle high voltages and switch high amounts of current without damage.
The IRF7702 also has a low gate capacitance, which gives it a fast response time. This makes it suited for high-speed switching applications such as motor control, where fast switching is necessary for accurate operation.
The IRF7702 is a reliable and versatile transistor capable of handling a variety of applications. Its robustness and fast response time make it an ideal choice for high-power applications, while its low gate capacitance makes it suitable for high-speed switching. Its wide range of applications and superior performance make it a popular choice for today’s electronic designs.
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