IRF7807D2TRPBF

Vgs(th) (Max) @ Id:	1V @ 250µA
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta)
FET Feature:	Schottky Diode (Isolated)
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	17nC @ 5V
Series:	FETKY™
Rds On (Max) @ Id, Vgs:	25 mOhm @ 7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	4.5V
Current - Continuous Drain (Id) @ 25°C:	8.3A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IRF7807D2TRPBF is a part of the OptiMOS product family of single N-channel power MOSFETs which are designed in a high-voltage, low-ohmic technology. Specifically, the IRF7807D2TRPBF is an N-channel enhancement mode power field-effect transistor (FET) with a breakdown voltage of 60V and low on-resistance of 1.8 mΩ. This device is housed in a 3-pin PowerPAK SO-8 package and is suitable for automated assembly and testing in the SMT process. It offers superior switching performance and a wide variety of different operating temperature ranges, making it suitable for a wide range of applications.This article will provide an in-depth look at the IRF7807D2TRPBF, discussing its application field and working principle.

Application Field

The IRF7807D2TRPBF is a versatile power FET suitable for a wide range of applications, including circuit protection, voltage regulation, signal conditioning, and motor drive, etc. Taking an example for circuit protection, suppose that the collector node of a switching power supply circuit is protected from short-circuit. In this case, the IRF7807D2TRPBF can be placed at the controlled node of the circuit, ensuring that the current won’t increase beyond a certain limit if the load is short-circuited. In this way, the device is able to protect the other components of the circuit from damage caused by excessive current.The IRF7807D2TRPBF can also be used in other common applications, such as automotive, computing, and consumer electronics. Its wide range of operating temperature and low on-resistance makes it a popular choice for these applications.

Working Principle

The IRF7807D2TRPBF is an N-channel enhancement mode power MOSFET, meaning that the drain is connected to the source when the gate voltage is 0V. The device operates in three main stages which are cut-off, linear, and saturation. In the cut-off stage, the gate voltage is 0V or negative so that the drain-source PN junction is reverse biased and the device is completely off. As the gate voltage approaches 0V, the on-resistance increases and the device will eventually stop conducting.In the linear stage, the gate voltage is higher than 0V, but lower than the threshold voltage, which is typically in the range of 2V-4V. In this state, the current through the device follows the equation:I_D = K(V_GS -V_TH)²,where K is the device’s transconductance, V_GS is the gate-source voltage, and V_TH is the threshold voltage. This equation implies that the device obtains a linear relationship between the gate voltage and the drain current. Finally, when the gate voltage is higher than the threshold voltage, the device enters the saturation stage where it behaves like a resistor, with an on-resistance that is dependent on the gate voltage.From the above discussion, it can be seen that the IRF7807D2TRPBF is a versatile power MOSFET with a wide range of application fields and a simple working principle.

Conclusion

The IRF7807D2TRPBF is a single N-Channel MOSFET that is capable of delivering a robust and reliable performance for a wide range of applications such as circuit protection and motor drive. Its wide range of operating temperature makes it suitable for automotive, computing, and consumer electronics, while its simple and intuitive working principle makes it easy to use and understand.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description