IRF7416QTRPBF

Mounting Type:	Surface Mount
Supplier Device Package:	8-SO
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Series:	HEXFET®
Packaging:	Cut Tape (CT)
Part Status:	Obsolete
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	20 mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id:	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	92nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1700pF @ 25V
FET Feature:	--
Power Dissipation (Max):	2.5W (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)

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IRF7416QTRPBF is a member of a specialized family of Field-Effect Transistors (FETs) referred to as Metal Oxide Semiconductor FETs (MOSFETs). It is an n-channel enhancement mode FET which means it has the ability to switch on when a positive voltage is applied to its gate terminal with respect to its source terminal. This type of device is often used for power switching applications since it has a very low resistance when it is switched on. An IRF7416QTRPBF is a single FET with a 4 millimetre x 4 millimetre package size. It is specifically designed for use in power switching applications, such as DC-to-DC converters, class D amplifiers, motor drivers, H-bridges, UPSs and ASICs. The device is capable of operating up to 100 volts and has a maximum current rating of 16 amps. The gate can withstand up to 20 volts between the gate and source and can be connected to an external trigger device, such as a microcontroller, to provide flexible control of the device.An IRF7416QTRPBF is a high-performance FET which is capable of delivering very high switching speeds. It has a low gate capacitance and therefore requires lower gate drive currents than other FETs. It also has a low on-resistance which allows for higher current loads with lower power dissipation. In addition, it also has a superior noise immunity which makes it ideal for high-frequency switching operations.The working principle of an IRF7416QTRPBF is based on the fact that an electric field can be created when a voltage is applied to its gate terminal. This electric field can be used to either attract or repel electrons which in turn causes a current to flow in the device. The current can be switched on or off depending on the voltage applied to the gate terminal.When the gate is left open, the current flow is normally off. When the gate is biased with a positive voltage, an electric field is created and this encourages the electrons to move from the source region to the drain region. This causes a current flow and this is known as an enhancement mode because the current is, in effect, being switched on. When the gate is biased with a negative voltage, an electric field is again created but this time it attracts the electrons away from the drain region and back to the source region. This stops the current flow and is known as a depletion mode as the current is being switched off.An IRF7416QTRPBF can also be used in applications such as synchronous rectifier circuits, circuit breakers and power factor correction. It is a very versatile device and can therefore be used in a wide range of applications where efficient power switching is required.In conclusion, IRF7416QTRPBF is a very popular MOSFET for power switching applications due to its low on-resistance and high switching speed. It is capable of operating up to 100 volts with a maximum current rating of 16 amps. It has a low gate capacitance and superior noise immunity which makes it ideal for high-frequency switching operations. Its working principle is based on the manipulation of electric fields which enables it to switch current on and off depending on the voltage applied to its gate terminal.

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