IRF7750GTRPBF

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The IRF7750GTRPBF is a silicon carbide solution that helps deliver improved operating performance and reliability to power systems used in automotive, industrial and consumer applications. The IRF7750GTRPBF is a high voltage, wide bandgap (Wbg) technology Gate Turn-On (GTO) power switch, specifically designed for use in high frequency switching applications. This device combines high power capability, superior current handling, low gate charge and low gate-to-drain charge to enable faster turn-on switches.

The IRF7750GTRPBF is an array of field-effect transistors (FETs) and uses a three-stage design. The first stage is a diode that acts as an emitter. The second stage is a p-type FET, which is used to control the voltage drop across the gate. This is followed by a first drain-source pair, which functions to reduce the voltage drop across the gate. A second drain-source pair is used to regulate the on-state current.

The IRF7750GTRPBF features an optimized gate structure, low equivalent gate resistance and low gate-drain source charge for improved operating performance and reliability, particularly in high temperature and frequency switching applications. The device also features a high breakdown voltage rating and has been tested to meet automotive load dump/short circuit requirements across a wide temperature range. This makes it a suitable solution for high power, high frequency switching applications, such as soft-start circuits, electric vehicle power steering, automotive alternators and starting circuits, high-side power supply activation, and various other consumer and industrial applications.

With an on-board diode and integrated resistive gate, the IRF7750GTRPBF eliminates the need for additional circuits such as EMI filter and current-sense resistors. The device also features an improved avalanche-safe operating area, which enables it to withstand high voltage surges without damage or loss of performance. Furthermore, the device offers a wide range of protection features such as temperature, voltage, current and over-voltage monitoring. This makes it a suitable solution for automotive and industrial applications that are subject to severe operating conditions and/or require reliable safety features.

In addition, the IRF7750GTRPBF offers improved thermal performance, allowing it to reduce junction to case thermal resistance and increase power handling capabilities. This makes it a suitable solution for applications involving high current density and high temperature operation. The device is available in a surface mount package and is compatible with the standard package outline requirements.

In summary, the IRF7750GTRPBF is a silicon carbide based Gate Turn On (GTO) power switch designed to deliver improved switching performance and reliability in power systems used in automotive, industrial and consumer applications. It features an array of field-effect transistors, on-board diode, integrated resistive gate, and various protection features, making it suitable for applications subject to severe operating conditions and/or requiring reliable safety features. It is available in a surface mount package and is compatible with the standard package outline requirements.

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