IRF7807VD2TRPBF

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The IRF7807VD2TRPBF is a single N-Channel HEXFET power MOSFET. This power MOSFET is manufactured by International Rectifier, who are widely respected in the power semiconductor industry with a long history of making product advancements, including their flagship HEXFET power MOSFET, which is widely used all over the world. This particular MOSFET is designed to be used in applications that require high speed, high power handling, and low on resistance. The IRF7807VD2TRPBF is a surface-mountable package, and offers excellent power dissipation and improved thermal performance, making it ideal for high current, high voltage applications such as power supply systems, motor drivers, and switching applications.

The IRF7807VD2TRPBF is a high-density power MOSFET device specifically designed for use in fast switching applications. The device utilizes an optimized vertical DMOS structure that provides a low source to drain resistance, as well as an integrated body diode for switching. The optimized structure also allows the device to be designed with a small form factor, providing improved power density and thermal performance. The device is rated for a maximum drain to source voltage of 500V and a drain current of 4A DC. At 500V and 4A, the device dissipates up to 120W, with a typical on resistance of 0.08ohm. The device also has a maximum junction temperature of 175°C and an operating temperature range of -55°C to +175°C.

The IRF7807VD2TRPBF features an internal charge-pump structure, which provides high-frequency operation and improved efficiency. The internal charge pump also allows for higher switching speed and faster switching transitions. The device also features a built-in gate protection feature, which provides additional protection for the MOSFET when subjected to high-voltage pulses. Additionally, the IRF7807VD2TRPBF has a lowgate charge, which allows for fast switching operations and increased switching efficiency. The on-resistance at a drain current of 4A is 0.08ohm, making it suitable for high current applications.

The IRF7807VD2TRPBF is an ideal device for applications that require high speed, high power handling and low on resistance. It can be used in a variety of power supply systems, motor drivers, and switching applications. It offers efficient power dissipation and improved thermal performance, allowing the device to be used in high current, high voltage applications. The optimized vertical DMOS structure provides excellent source to drain resistance and the integrated body diode allows for switching operations. Additionally, the small form factor and the built-in gate protection make this device ideal for use in fast switching applications.

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