Allicdata Part #: | IRF7555CT-ND |
Manufacturer Part#: |
IRF7555TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2P-CH 20V 4.3A MICRO8 |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 4.3A 1.25W Sur... |
DataSheet: | IRF7555TR Datasheet/PDF |
Quantity: | 263 |
Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
Base Part Number: | IRF7555 |
Supplier Device Package: | Micro8™ |
Package / Case: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 1.25W |
Input Capacitance (Ciss) (Max) @ Vds: | 1066pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 55 mOhm @ 4.3A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4.3A |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | 2 P-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Cut Tape (CT) |
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The International Rectifier (IR) Field Effect Transistor (FET) 7555TR is an array of four FETs on a single monolithic chip. It is a versatile device that can be used in a variety of applications and types of systems. Typically, it is used as either a voltage regulator or in power amplifier circuits. It is a popular choice for its ability to provide efficient operation and reliable performance.
The IRF7555TR consists of four power MOSFETs in a single package. This device is capable of operating from a wide range of voltages, from 5-100 VDC and the FETs in the array can be run in parallel for increased current handling and higher power applications. The FETs in the array are configured in a dual-gate topology and can be controlled by a single gate, making it ideal for multi-input applications. The device also features a surge current rating, making it suitable for higher power levels and high frequency applications.
In terms of applications, the IRF7555TR is commonly used in voltage regulator circuits, and is often used as a voltage regulator for monitor power supplies, as well as other types of regulated power supplies. It is also frequently used in power amplifier circuits, and is capable of delivering high power levels in audio and other high frequency applications. Additionally, the IRF7555TR can also be used as a motor driving or switching circuit, or as a high side driver, allowing it to control the switch on a large load.
The IRF7555TR consists of four independent FETs, each of which can be individually biased using the gate voltage. The gate voltage is determined by the current flowing through the device\'s gate resistor, with the threshold level being set by the current applied to the resistors. When a positive gate voltage is applied, the drain-source voltage across each FET will be lowered, allowing more current to flow through the device. Conversely, when a negative gate voltage is applied, the drain-source voltage across each FET will be raised, decreasing the current. This allows the device to be used as either a voltage regulator or a power amplifier, depending on the setting of the gate voltage.
The device is also capable of operating in high frequency applications, such as audio systems, where the FETs in the array can be driven at speeds up to 12 MHz. The gate charge of the FETs can also be externally controlled, allowing their switching times to be varied, allowing the user to adjust the device\'s frequency response. Finally, the FETs in the array can also be shorted together in order to support higher power levels.
In conclusion, the IRF7555TR is a versatile device that can be used in a variety of applications and types of systems. It is capable of operating from a wide range of voltages, and is suitable for use in both voltage regulator and power amplifier circuits. The device also has a high frequency response and a high surge current rating, making it suitable for high power applications. Furthermore, the ability to externally control the gate charge of the FETs makes it suitable for use in audio and other high frequency applications. Lastly, the FETs in the array can be shorted together in order to support higher power levels, making it a popular choice for many projects and applications.
The specific data is subject to PDF, and the above content is for reference
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