| Allicdata Part #: | IRF7452TR-ND |
| Manufacturer Part#: |
IRF7452TR |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 100V 4.5A 8-SOIC |
| More Detail: | N-Channel 100V 4.5A (Ta) 2.5W (Ta) Surface Mount 8... |
| DataSheet: | IRF7452TR Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 930pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 60 mOhm @ 2.7A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 4.5A (Ta) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The IRF7452TR is a part of the Transistors – FETs, MOSFETs – Single product line produced by Infineon Technologies. It is a high-current, high-voltage, Trenchmos Transistor with integrated protection features.
This device features strong withstand voltages and improved current carrying capabilities enabling it to operate in a wide range of critical applications. The low on-state resistance of the IRF7452TR makes it suitable for applications that require high power output.
The IRF7452TR is a versatile device for many different applications. It is ideally suited for applications in the telecommunication and automotive industries where power consumption and efficiency are important. It can also be used in a variety of consumer electronics applications such as home appliances, mobile phones, and hard disk drives.
The IRF7452TR can also be used in power amplifiers, power supply regulation, and switching regulators. For example, it can be used in power amplifier circuits to provide increased voltage and current gains. In switching regulators, it can provide improved power efficiency, faster response times, and superior switching capabilities.
In addition to having strong performance characteristics, the IRF7452TR has integrated protection features that also provide additional protection for users. The device offers overvoltage protection, overcurrent protection, and reverse-bias protection. All of these features provide the user with additional safety and reduce the risk of device failure.
The working principle of the IRF7452TR depends on its type of MOSFET. The transistor is a three-terminal, three-layer semiconductor, featuring a thin gate oxide layer and source/drain electrodes on the same semiconductor material. This arrangement allows the gate terminal to control the current between the source and drain terminals by changing the resistance of the channel between them.
In addition, the IRF7452TR has an integrated protection circuit that prevents excessive current from flowing from the Drain to the Source terminal. This feature ensures that the device remains safe even when exposed to inrush or overload currents.
Finally, the IRF7452TR also has integrated relay control capabilities, allowing it to switch a large number of relays in a fast and precise manner. This can help reduce the number of individually operated relays required in certain applications. Furthermore, the device can be used to control a single relay in applications where high frequency switching is necessary.
In summary, the IRF7452TR is a robust, high-power MOSFET device that can be used in a wide variety of commercial, industrial, and consumer applications. Its low on-state resistance, integrated protection features, and relay control capabilities make it an ideal choice for applications that need high-performance, efficient operation.
The specific data is subject to PDF, and the above content is for reference
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IRF7452TR Datasheet/PDF