IRF7700GTRPBF

Series:	HEXFET®
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	8.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Rds On (Max) @ Id, Vgs:	15 mOhm @ 8.6A, 4.5V
Vgs(th) (Max) @ Id:	1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	89nC @ 5V
Vgs (Max):	±12V
Input Capacitance (Ciss) (Max) @ Vds:	4300pF @ 15V
FET Feature:	--
Power Dissipation (Max):	1.5W (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-TSSOP
Package / Case:	8-TSSOP (0.173", 4.40mm Width)

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IRF7700GTRPBF is a type of single N-Channel Metal Oxide Field Effect Transistor (MOSFET). It is manufactured by International Rectifier (IR) Company, and it is a high-performance MOSFET with an exposed gate. It is an excellent device for high-frequency power conversion, and applications where switching performance is important.The IRF7700GTRPBF is designed for use in RF, microwave amplifiers, low noise receivers and switches. The device features low dose rate sensitivity, fast switching speed and improved rejection of electromagnetic interference. It has a breakdown voltage of 100V, a drain-source on-state resistance of 0.02 Ohms and a drain current of 14 Amps. It also has a gate charge of 45 nC and is capable of providing up to 65.2 W of power dissipation.The IRF7700GTRPBF is capable of operating over a wide range of temperatures, from -55 to +150°C, and over a wide range of frequencies, from DC to 5 GHz. It has excellent thermal properties, with a junction-to-ambient thermal resistance of 17°C per watt. This MOSFET is designed for use with 20-35 MHz supply frequencies and operating at a total gate charge of 17 nC. It is a good choice for use in high-frequency switching applications.The working principle of the IRF7700GTRPBF is based on the movement of various electrons within the metal oxide semiconductor structure. When a voltage source is applied to the gate, the metal oxide semiconductor structure changes its conductivity, allowing current to flow through it. The change in conductivity is determined by the applied electric field, which is also known as the "gate threshold voltage". This electric field creates an inversion layer, which is used to control the current flow.When using this transistor, the user should take into consideration that the voltage source must be greater than the gate threshold voltage in order to overcome the source-to-drain electric field and make the device turn on. The gate threshold voltage of the IRF7700GTRPBF is 4.3V, which means that the voltage source must be at least 4.3V in order to turn the device on.The IRF7700GTRPBF is a great choice for applications where switching performance and power conversion are important. It is a robust device with excellent thermal properties, low dose rate sensitivity and fast switching speed. With its exposed gate, it is perfectly suited for use in high-frequency power conversion, RF, and microwave amplifiers, and low noise receivers and switches.

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