
Allicdata Part #: | IRF7769L2TRPBFTR-ND |
Manufacturer Part#: |
IRF7769L2TRPBF |
Price: | $ 2.10 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V DIRECTFET L8 |
More Detail: | N-Channel 100V 375A (Tc) 3.3W (Ta), 125W (Tc) Surf... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 2.10000 |
10 +: | $ 2.03700 |
100 +: | $ 1.99500 |
1000 +: | $ 1.95300 |
10000 +: | $ 1.89000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | DirectFET™ Isometric L8 |
Supplier Device Package: | DIRECTFET L8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.3W (Ta), 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 11560pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 300nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 3.5 mOhm @ 74A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 375A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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IRF7769L2TRPBF is a type of Transistors - FETs, MOSFETs - Single, which is widely used in various kinds of applications and circuits. This type of transistor has a very low on-resistance, a wide range of gate current threshold, and is capable of working with high frequency. It is a fast switching device with high power switching capability.
The IRF7769L2TRPBF is a N-channel Enhancement Mode Field-Effect Transistor (FET). It is manufactured with a Silicon Plate base and is used in a variety of circuit applications where high current and low voltage is needed. It has excellent high-current and high-speed switching characteristics, with a maximum current rated of 200A and a maximum voltage rating of 10V.
IRF7769L2TRPBF has an insulated gate, which is an ideal feature for the correct operation of a transistor in a circuit. This type of transistor works on the principle of the hydrogen bonds between an atom\'s lone pair of electrons and the electrons of another atom forming a tunnel junction. This allows electrons to flow through the insulation gate and create a current. The insulated gate is also a major reason behind its great linearity, since it eliminates the formation of large transistors.
This type of transistor works through four stages: turn-on, off, and a slow turn-off. In the turn-on stage, the voltage applied to the drain is higher than the voltage applied to the gate. This creates an electric field which causes an increase of current in the connection between the drain and the source. This allows electrons to flow through the insulation gate.
In the off stage, the voltage applied to the gate is lower than the voltage applied to the drain. This causes the opposite effect, which is letting resistance build up in the drain and source and preventing the current from flowing. This turns off the transistor.
In the slow turn-off stage, the voltage applied to the gate is still lower than the voltage applied to the drain. However, it is not low enough to turn off the transistor. Instead, it slowly reduces the current flowing through the drain and source. This allows the transistor to slowly turn off without causing any sudden changes or damages to the circuit.
The IRF7769L2TRPBF is used in numerous applications and circuits, such as power amplifiers, drivers, relays, switching circuits, power dividers, filters, and so on. It is an ideal device for applications that require high speed and high power handling capabilities. It is also used in switching applications, which need to be switched very quickly with minimal voltage droop.
The IRF7769L2TRPBF is an excellent device for applications that require high current and low voltage. Its low on-resistance, wide range of gate current threshold, and high-speed switching capabilities make it a top choice for many circuit applications.
The specific data is subject to PDF, and the above content is for reference
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