IRF737LCSTRL Allicdata Electronics
Allicdata Part #:

IRF737LCSTRL-ND

Manufacturer Part#:

IRF737LCSTRL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 300V 6.1A D2PAK
More Detail: N-Channel 300V 6.1A (Tc) Surface Mount D2PAK
DataSheet: IRF737LCSTRL datasheetIRF737LCSTRL Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: --
Power Dissipation (Max): --
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 750 mOhm @ 3.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Drain to Source Voltage (Vdss): 300V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The IRF737LCSTRL FET, or field effect transistor, is an advanced and powerful semiconductor device that is often used in a wide range of applications. This transistor is most commonly used as a type of power electronic switch that is used to replace mechanical relays in the control of motors and other high-power circuits. This device is also frequently used in switching supplies, DC-DC converters, and various control applications.

The IRF737LCSTRL FET is part of a wider class of FETs known as Junction Field Effect Transistors (JFETs). The basic operation of a JFET is to operate as a voltage-controlled switch by modulating the input voltage across a p-n junction. This type of transistor differs from other types of FETs such as MOSFETs and IGBTs, in that its gate voltage is used to control the current flowing between its source and drain terminals, unlike the back-biased BJTs (bipolar junction transistors). The IRF737LCSTRL FET has an entrenched threshold voltage, or “breakdown” voltage, which remains constant regardless of the current flowing through it, making it particularly suitable for use in current-limited circuits.

One of the main advantages of the IRF737LCSTRL FET is its high switching speed. This device is capable of switching at speeds of up to 500 nanoseconds, which is much faster than the switching speeds of other types of FETs. It also has a low on-state resistance, which allows it to more efficiently control the higher current and power levels in applications such as motors, power supplies, and DC-DC converters. In addition, its gate threshold voltage remains more stable with temperature changes, making it more reliable and efficient.

The IRF737LCSTRL FET also has excellent surge capability, which makes it suitable for use in applications requiring high transient currents. Its high-frequency switching capability also makes it suitable for use in switching supplies and other control applications. In addition, it has superior thermal properties, which allow it to be used in power applications where higher temperatures may be present.

The IRF737LCSTRL FET is suitable for a wide range of applications due to its high switching speed, low on-state resistance, stable threshold voltage, excellent surge capability, high-frequency switching capability, and superior thermal properties. It can be used to replace mechanical relays in the control of motors and other high-power circuits, as well as in switching supplies, DC-DC converters, and various control applications. Its versatility makes it a powerful and reliable semiconductor device that can be used in a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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