Allicdata Part #: | IRF7501TRPBFTR-ND |
Manufacturer Part#: |
IRF7501TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2N-CH 20V 2.4A MICRO8 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 2.4A 1.25W Sur... |
DataSheet: | IRF7501TRPBF Datasheet/PDF |
Quantity: | 4000 |
Vgs(th) (Max) @ Id: | 700mV @ 250µA |
Base Part Number: | IRF7501PBF |
Supplier Device Package: | Micro8™ |
Package / Case: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 1.25W |
Input Capacitance (Ciss) (Max) @ Vds: | 260pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs: | 8nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 135 mOhm @ 1.7A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 2.4A |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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IRF7501TRPBF are one of the world\'s most popular discrete MOSFET devices. It is an array of four, N-channel MOSFETS with a common source connected between two adjacent devices. It is designed to handle 20A at 55V in a single package.
These parts are widely used in many different applications. They are commonly used for high-power audio and loudspeaker drivers, DC-DC converters, and other driver applications.
The IRF7501TRPBF device is a great choice for applications in which high current and low on-state resistance is needed, such as power switching and DC/DC converters. The device can be used in a single-diode bridge configuration, or as two dual-parallel pairs, or in a configuration with two pairs each with two diodes.
The way IRF7501TRPBF works is pretty simple. It contains four discrete N-channel MOSFETS with a common source connected between two adjacent devices. In a single package, the device can handle up to 20A at 55V. When voltage is applied to the gate of the MOSFET, current starts to flow from the source to the drain. The current is modulated by the applied gate voltage. Therefore, when the applied gate voltage is increased, the amount of current that passes through the device also increases.
The device also has excellent thermal performance when compared to other MOSFETs. It features low on-state losses and low capacitive turn-on losses, which allows for excellent efficiency in high-speed applications. This makes the device a great choice for applications requiring high switching frequencies, such as DC/DC converters and power switching.
The IRF7501TRPBF is also designed to handle high surge currents, making it a great choice for high current switching applications. It also features excellent ESD protection, making it ideal for applications with high electrostatic discharge levels.
Overall, the IRF7501TRPBF device is a great choice for a wide range of applications, from high-power audio and loudspeaker drivers, DC-DC converters, and other driver applications. It is an excellent choice for high current switching applications, offering excellent thermal and ESD protection. It\'s small size and low cost make it an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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