IRF7301TRPBF

IRF7301TRPBF is a dual N-Channel MOSFET featuring lower RDS(on), higher current handling capability, and low gate drive power in these small packages.

In the field of RF transistors, IRF7301TRPBF is suitable for high voltage switching and provides high input impedance. This application requires high input impedance and low output impedance as well as excellent signal integrity and isolation. As such, RFP (Radio Frequency Power) MOSFETs are the go-to device for this purpose.

The IRF7301TRPBF has a 9V Power MOSFET having logic level gate voltage. It is suitable for applications where low gate drive power is required while providing higher gate resistance. This IC includes two low gate resistance MOSFETs.

The features of this part include:

• Voltage rating of 65V
• Current handling capability of 12A
• RDS(on) of 0.4Ω
• Input capacitance (Ciss) of 1150pF
• Low gate charge
• Operating temperature range of -55°C to +150°C

The working principle of this device is based on the depletion region phenomenon. A depletion region is a layer of semiconductor material that does not contain any charge carriers. The width of a depletion region increases when the voltage of the P-N junction increases. When the voltage of the P-N junction is increased above the threshold voltage, electrons are injected into the depletion region, forming an inversion layer.

When a MOSFET is turned on, the gate voltage is increased above the threshold voltage which modifies the depletion region. This in turn causes the inversion layer to become narrower and produces a lower resistance between the source and drain, allowing current to flow. When the gate voltage is decreased, the depletion region widens, thereby increasing the resistance between the source and drain and causing the MOSFET to switch off.

In conclusion, the IRF7301TRPBF is a dual N-Channel MOSFET which is suitable for applications where low gate drive power is required while providing higher gate resistance. This device is applicable for RF transistors and is capable of providing high input impedance and low output impedance with excellent signal integrity and isolation.