Allicdata Part #: | IRF7304-ND |
Manufacturer Part#: |
IRF7304 |
Price: | $ 1.31 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2P-CH 20V 4.3A 8-SOIC |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 4.3A 2W Surfac... |
DataSheet: | IRF7304 Datasheet/PDF |
Quantity: | 28846 |
1 +: | $ 1.19070 |
10 +: | $ 1.07541 |
100 +: | $ 0.86398 |
500 +: | $ 0.67197 |
1000 +: | $ 0.55678 |
Series: | HEXFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 4.3A |
Rds On (Max) @ Id, Vgs: | 90 mOhm @ 2.2A, 4.5V |
Vgs(th) (Max) @ Id: | 700mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 610pF @ 15V |
Power - Max: | 2W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
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The IRF7304 is part of a family of advanced HEXFET (high voltage, high-speed, fast-switching, long-life) power MOSFETs created by International Rectifier (IR). It is a three-terminal N-MOSFET, or a field-effect transistor. The IRF7304 has an avalanche energy rating of 8mJ and is offered in two package styles, the TO-220 and the SMD, both of which feature excellent power handling capabilities and fast switching speeds with very low on-resistance.
The IRF7304\'s single N-channel, together with the HEXFET technology, makes it ideal for applications such as controlling power management in computers and graphics cards, power amplifier voltage regulators, low-voltage DC-DC converters and other industrial and telecom backplane power systems. It is designed to offer excellent current-carrying capacity and sufficient power dissipation, as well as very fast switching speeds for optimum performance and efficiency. Additionally, its low on-resistance offers enhanced current limiting capabilities.
The basic principle behind the operation of the IRF7304 is that of creating a voltage-controlled resistor. In N-MOSFET transistors, the electric current is controlled by the voltage applied between the gate and the source, with the additional feature of a reverse diode that guards against negative voltages.
The working principle of the HEXFET technology is based on the external gate voltage controlling the electric current between the drain and source using the two-dimensional channel established by the source-to-bulk and the drain-to-bulk regions. The gate voltage controls the resistance at the channel, which lowers the electric current. When the voltage is removed, the channel\'s resistance returns to its initial state, resulting in the termination of the flow of electric current. This makes it very useful in applications where cycle-by-cycle current limiting is needed and in applications with no gate voltage the device behaves like an open circuit.
The IRF7304 is also available in an array of different sizes, ranging from 4- by 4-inch down to 3- by 3-inch and 2- by 2-inch. This makes it suitable for a range of different applications, from low-power commercial designs to high-power industrial designs. With its built-in high voltage protection, the IRF7304 can also be used in applications that require high gate-source breakdown voltage. It is ideal for use in gate driver and PFC (pulse-width-modulation) circuits.
Overall, the IRF7304 is an excellent choice for applications requiring high-current power management, faster switching speeds, and low on-resistance. With its various package sizes, it is an ideal solution for a variety of power application needs. It is also an ideal choice to use in high-voltage designs due to its high-voltage protection and its built-in current limiting capability.
The specific data is subject to PDF, and the above content is for reference
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