Allicdata Part #: | IRF7313QTRPBFCT-ND |
Manufacturer Part#: |
IRF7313QTRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2N-CH 30V 6.5A 8-SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 6.5A 2W Surfac... |
DataSheet: | IRF7313QTRPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Base Part Number: | IRF7313QPBF |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 2W |
Input Capacitance (Ciss) (Max) @ Vds: | 650pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 33nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 29 mOhm @ 5.8A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 6.5A |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Standard |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Cut Tape (CT) |
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IRF7313QTRPBF is a power MOSFET array which has a large usable voltage range. It changes the conductivity of the device by applying a control gate voltage on the gate. The device consists of two N-Channel MOSFETs housed in a vertical dual-in-line package which allows for easy assembly. The power MOSFETs have a high input impedance, fast switching characteristics and low output capacitance which makes them ideal for use in a variety of applications. IRF7313 can be used in high-frequency power supplies, motor control, and power amplifiers. It is also used in switching applications such as in solar inverters and other industrial equipment.
This power MOSFET array works on the principle of Field-Effect Transistors (FETs). FETs are a type of transistor where the input impedance is extremely high and the output impedance is extremely low. When a control gate voltage is applied, the channel between the source and drain is established. This creates a region of high electric field which makes it easier for the electrons to move from the source to the drain. By controlling the voltage applied to the gate, the conductivity of the device can be controlled and this is used in power MOSFETs for controlling the output current. The advantage of using FETs is that they are simpler to build and are less prone to the effects of temperature, aging, and power fluctuations.
The IRF7313QTRPBF power MOSFET array consists of two N-Channel MOSFETs, each of which has an on-resistance of 0.09 ohms, a breakdown voltage of 900V, and a gate threshold voltage of 4V. It has an operating temperature range of -55 degrees Celsius to 150 degrees Celsius and it has a maximum power dissipation of 10W. The device has low leakage current and high switching speeds which makes it ideal for high frequency applications. The package is UL94V-0 rated and has a lead-free design which makes it environmentally friendly.
IRF7313QTRPBF is a power MOSFET array with a high input impedance, fast switching characteristics, and low output capacitance. It is designed for use in high-frequency power supplies, motor control solutions, and power amplifiers. The high-voltage range and wide operating temperature range make it suitable for a variety of applications. Additionally, the low leakage current and high switching speeds of the device make it ideal for high frequency applications.
The specific data is subject to PDF, and the above content is for reference
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