
Allicdata Part #: | IRF7314PBFTR-ND |
Manufacturer Part#: |
IRF7314TRPBF |
Price: | $ 0.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2P-CH 20V 5.3A 8-SOIC |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 5.3A 2W Surfac... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.29000 |
10 +: | $ 0.28130 |
100 +: | $ 0.27550 |
1000 +: | $ 0.26970 |
10000 +: | $ 0.26100 |
Vgs(th) (Max) @ Id: | 700mV @ 250µA |
Base Part Number: | IRF7314PBF |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 2W |
Input Capacitance (Ciss) (Max) @ Vds: | 780pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 58 mOhm @ 2.9A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 5.3A |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | 2 P-Channel (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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IRF7314TRPBF is a 14A, HexFET power MOSFET produced by International Rectifier (IR). It is specifically designed for very low voltage switching applications. It is a 25V device that can withstand voltages up to 50V, making it an ideal choice for automotive, industrial and consumer electronics applications.
The IRF7314TRPBF has an advanced output stage design that allows it to efficiently deliver high current while dissipating very little heat. It features current-share operation, which means it can be used in parallel without the need for external components. This reduces cost and makes the device more reliable. Additionally, its low gate threshold voltage makes it highly suitable for driving low voltage applications.
Applications of IRF7314TRPBF include dc-dc switching and power supply circuits, as well as high-power amplifier stages. Its high power dissipation and high operating temperatures make it ideal for high power switching applications. It is also suitable for use in automotive systems, such as power steering and engine control modules.
The working principle of the IRF7314TRPBF is relatively simple. It is a field effect transistor (FET) that utilizes a gate and drain-source channel to control the flow of current. When a voltage is applied to the gate, a voltage gradient is created which causes electrons to move from the source to the drain. This movement of electrons results in a current flow from the source to the drain.
The device also utilizes a parasitic bipolar junction transistor (BJT) which improves reliability and thermal performance. This BJT dissipates some of the heat generated by the device, allowing it to operate at higher temperatures. Additionally, it helps to protect the device against ESD damage and reduce switching noise.
Overall, the IRF7314TRPBF is a reliable and cost-effective solution for high power switching applications. Its low gate threshold voltage and current-share operation makes it suitable for a wide range of applications in automotive, industrial, and consumer electronics.
The specific data is subject to PDF, and the above content is for reference
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