Allicdata Part #: | IRF7316TR-ND |
Manufacturer Part#: |
IRF7316TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2P-CH 30V 4.9A 8-SOIC |
More Detail: | Mosfet Array 2 P-Channel (Dual) 30V 4.9A 2W Surfac... |
DataSheet: | IRF7316TR Datasheet/PDF |
Quantity: | 1000 |
Series: | HEXFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 4.9A |
Rds On (Max) @ Id, Vgs: | 58 mOhm @ 4.9A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 34nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 710pF @ 25V |
Power - Max: | 2W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
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IRF7316 P-channel enhancement mode transistors, also known as Field-Effect Transistors (FETs), are widely used in a variety of different applications. This article will discuss the IRF7316 application field and working principle in more depth.
Firstly, IRF7316 FETs are primarily used in power circuits, ranging from low voltages to high voltages. Due to their relatively low on-resistance, they are often used in switching regulator applications, such as in power supplies, DC-DC converters, and DC-AC inverters. They are also suitable for pulse-width modulation (PWM) and high-frequency applications, as well as low-side and high-side switching circuits. In addition, they are used in motor control circuits and electro-mechanical drives.
The IRF7316 FETs are also used in industrial and automotive applications, such as products and devices related to air conditioning, automotive, medical, and audio/video. This is mainly due to the fact that FETs are especially well-suited for high-side and low-side switching circuits, due to their superior immunity to ambient transients, switching losses, and EMI and RFI interference, as compared to other types of switches.
The IRF7316 transistor array is composed of four integrated power FETs that have a maximum drain-source voltage of 200 volts (VDS). The breakdown voltage is also relatively high, at 125 volts. It has an on-resistance of less than 28 milliohms (mΩ). It also features a high-current carrying capability, with a peak pulse current of up to 80A.
The IRF7316 transistors can be operated in various different modes, such as linear, linear/pulse modulation, as well as switch-mode, depending on the application. The operating frequency can vary depending on the application, but it typically ranges from 50 Hz to 100 kHz.
The working principle of the IRF7316 FET is based on a three-terminal structure. The source terminal is connected to a source voltage and the drain terminal to a load. The gate terminal acts as the control terminal, which can be used to control the current flow between the source and the drain terminals. When the gate receives an electrical signal, it drives the FET into an "on" state, which allows the current to flow through the FET from the source to the drain. When the gate voltage is removed, the FET enters the "off" state, which stops the current from flowing through the FET. This makes the FET an ideal device for switching applications, as it can turn on and off very quickly, making it ideal for high-frequency applications.
Overall, the IRF7316 FETs is a highly reliable, low-cost device that is suitable for power circuits and various other applications. Thanks to its low on-resistance and high-current carrying capability, it is especially well-suited for switch-mode and pulse-width modulation applications. It is also relatively easy to use, making it a popular choice for both hobbyists and professionals.
The specific data is subject to PDF, and the above content is for reference
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