Allicdata Part #: | IRF7317PBF-ND |
Manufacturer Part#: |
IRF7317PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N/P-CH 20V 8-SOIC |
More Detail: | Mosfet Array N and P-Channel 20V 6.6A, 5.3A 2W Sur... |
DataSheet: | IRF7317PBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 700mV @ 250µA |
Base Part Number: | IRF7317PBF |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 2W |
Input Capacitance (Ciss) (Max) @ Vds: | 900pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 29 mOhm @ 6A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 6.6A, 5.3A |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | N and P-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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The IRF7317PBF is an enhancement-mode field effect transistor (MOSFET) array that was developed by International Rectifier for use in various applications. It is a monolithic integrated circuit with three source terminals which provide a low impedance signal path between the drain and gate of the device. This device is capable of blocking signal or voltage levels under various conditions, and is most commonly used in switching applications. It is a unique device with a variety of applications due to its wide range of gate voltages.
The IRF7317PBF array consists of three MOSFETs, each with 20 volts of drain-source breakdown voltage and 30 amps of continuous drain current. It is capable of providing a low on-resistance of 3.2 ohms at temperatures below 25°C. The device has a total gate capacitance of 60 pf, which makes it suitable for high frequency switching applications. The device also has an integrated high-frequency body-diodes which contributes to its high-frequency switching capability. The device can also withstand transient voltage spikes up to 200V.
The IRF7317PBF array’s low gate voltage makes it suitable for a variety of applications, such as power supplies, motor control, and lighting control. Its low on-resistance makes it suitable for high-side switching applications. It can also be used to control switched mode power supplies, and switch ON/OFF large motors and solenoids.
The working principle of the IRF7317PBF array is relatively simple. When a gate voltage is applied to the terminal of the device, it causes a current to flow through the device, between the drain and source terminals. This current creates a magnetic field, which shields the drain and source from electric charges which can cause a current to flow. Thus, the device acts as a switch, allowing or blocking a current or voltage, depending on the level of the gate voltage. This device can also be used for noise or over-voltage protection. As a rule, when the gate voltage rises above a certain level, the device switches off and blocks the current from flowing.
The IRF7317PBF array is used in various applications, such as industrial and medical equipment, computer motherboards, and telecommunications equipment. The device is also used in video game consoles, automotive power systems, home automation systems, and motor control applications. Due to its low gate voltage, it is capable of operating at high switching speeds and in a wide range of temperatures. Furthermore, the device is easy to integrate into a variety of circuit layouts, making it a highly versatile choice for many types of applications.
In summary, the IRF7317PBF array is a versatile and reliable MOSFET device that is suitable for use in a range of applications. It features a low gate voltage, low on-resistance, and high frequency body-diodes, which make it an excellent choice for high-speed switching applications. It is an easy-to-integrate device, and is frequently used in industrial, medical, and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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