IRF7325 Allicdata Electronics
Allicdata Part #:

IRF7325-ND

Manufacturer Part#:

IRF7325

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET 2P-CH 12V 7.8A 8-SOIC
More Detail: Mosfet Array 2 P-Channel (Dual) 12V 7.8A 2W Surfac...
DataSheet: IRF7325 datasheetIRF7325 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: HEXFET®
Packaging: Tube 
Part Status: Obsolete
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 7.8A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.8A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 10V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Description

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IRF7325 are a type of Field Effect Transistor (FET) with a MOSFET array that have many practical uses. They are used in a variety of electronic circuits, aiding in the control of many different types of power operations. By using the IRF7325, engineers can design complex power management solutions with greater speed and accuracy. This article will discuss the various applications of IRF7325, as well as their working principle.

Applications

IRF7325 are highly versatile in their use, as they are able to provide a wide range of useful management solutions to different types of circuit design projects. The wide range of applications where IRF7325 can be utilized includes the following:

  • Multi-core processors
  • Audio amplifiers
  • LEDs
  • Power over Ethernet (POE)
  • Power management solutions
  • Data storage devices
  • Cameras
  • Mobile devices
  • Internet of Things (IoT)
  • Automotive electronics

The widespread use of IRF7325 allows engineers to develop power management solutions without the need of developing a new control device each time. This means that their utility can be maximized, allowing for greater cost savings in production and design. Furthermore, IRF7325 are highly reliable and can be used in a variety of environments.

Working Principle

The working principle of IRF7325 is based on the same principles of all FETs and MOSFETs. These transistors act as controlled switches, as they are able to regulate the flow of current. This is enabled by the MOSFET array, which allows engineers to customize the parameters of their power management solutions. Depending on the needs of the project, the gate parameters on the transistor can be adjusted in order to control the flow of current.

The IRF7325 works by using the voltage applied between the gate and source terminal. The higher the voltage applied to the gate, the more current will be allowed to be transferred from the source to the drain. By controlling the voltage applied to the gate, engineers can effectively regulate the amount of current passing through the transistor.

Conclusion

IRF7325 are a powerful and reliable FET with a MOSFET array that can be used for a wide range of applications. Their manipulation of voltage allows them to be used in advanced power management solutions, thus saving both time and cost for engineers. While the use of IRF7325 does not require a deep understanding of FETs and MOSFETs, engineers should still ensure that they are knowledgeable on these principles as to ensure their design incorporates the correct protocols.

The specific data is subject to PDF, and the above content is for reference

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