IRF7328TR

Series:	HEXFET®
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	2 P-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	8A
Rds On (Max) @ Id, Vgs:	21 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	78nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	2675pF @ 25V
Power - Max:	2W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO

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IRF7328TR is a high-frequency power MOSFET or P-channel complementary metal oxide semiconductor device. It is also known as CMOSFET or pMOSFET. It is used in a wide range of applications including high frequency switching applications, voltage regulated power conversions and regulated output transistor (ROT) circuits. As a high-frequency power MOSFET, the IRF7328TR has an integrated gate-drive high-side circuit, simplifying the design of complex ROT circuits.The IRF7328TR is a product of the International Rectifier company and is available in an industry-standard TO-270AA surface mount package. The device offers low power consumption and the ability to handle high frequency signals in the output circuit. It is a N-Channel MOSFET comprised of four individual N-Channel MOSFETs that are connected in parallel. The device is ideal for providing high current outputs with fast switching times, and is particularly well suited for use in high power applications.The IRF7328TR is best suited for applications such as switched mode power supplies, radio frequency energy transfer, pulse width modulated power converters and other high-frequency, high-power circuits. It is also used in automotive applications where it is used to control large currents in power windows, vents and fans.The IRF7328TR’s exterior package is that of a TO-270AA surface mount device. The device comes with a lead framedesigned to withstand temperatures up to 300°C. The device is rated for continuous drain current of up to 150 amps, has an avalanche power rating of up to 150 watts, and a gate-source voltage of up to 20 volts.The basic operating principle of the IRF7328TR is similar to that of all other MOSFETs. It is based on the charge-carrier injection process, wherein an applied voltage to the gate of the MOSFET causes electrons to tunnel through the gate oxide and into the silicon substrate. The electrons, which come from the internal power supply, form a stable inversion layer, which generates a current between the drain and source terminals. This current flow is a function of the gate voltage and the type of circuit in which the MOSFET is being used.The IRF7328TR is a powerful, versatile device that can be used in a wide variety of applications. This device is well suited for use in voltage-regulated power conversion circuits, radio frequency energy transfer and other high-frequency, high-power circuits. It is also ideal for use in automotive applications, such as controlling large currents in power windows, vents and fans.

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