IRF7328TRPBF Allicdata Electronics
Allicdata Part #:

IRF7328PBFTR-ND

Manufacturer Part#:

IRF7328TRPBF

Price: $ 0.30
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET 2P-CH 30V 8A 8-SOIC
More Detail: Mosfet Array 2 P-Channel (Dual) 30V 8A 2W Surface ...
DataSheet: IRF7328TRPBF datasheetIRF7328TRPBF Datasheet/PDF
Quantity: 1000
1 +: $ 0.29600
10 +: $ 0.28712
100 +: $ 0.28120
1000 +: $ 0.27528
10000 +: $ 0.26640
Stock 1000Can Ship Immediately
$ 0.3
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Base Part Number: IRF7328PBF
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Input Capacitance (Ciss) (Max) @ Vds: 2675pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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A FET (field effect transistor) is a type of transistor that uses an electric field to change or modulate its conduction. The FET type of transistor has several advantages over other types of transistor. One advantage is that its design is often simpler than other types of transistors, making it easier to use and more reliable. Another advantage is that it can be used to amplify signals more efficiently than other types of transistors.

The IRF7328TRPBF is a single N-channel enhancement type metal oxide field effect transistor (MOSFET). It is designed to be particularly suitable for high frequency, high current switching applications, such as power MOSFETs, battery-driven applications and DC-DC converters. The IRF7328TRPBF has excellent switching speeds and low on-state resistance.

The IRF7328TRPBF application field includes:

  • DC-DC converters
  • Automotive lighting
  • Home appliances
  • USB power supplies
  • Battery-driven applications
  • DC motor drives

The working principle of the IRF7328TRPBF consists of a MOSFET and a gate. The MOSFET consists of two channels and a current magnitude, which is monitored by an external controller. When the MOSFET is switching, the current passes through the external controller which will affect the gate voltage, reducing the on-state resistance, increasing current and reducing power consumption. The gate voltage is amplified by the MOSFET’s own capacitance, making the operating frequency higher and the power dissipation much lower.

In addition to the IRF7328TRPBF’s fast switching speed and low on-state resistance, the MOSFET also has several other advantages. It can work with a variety of loads and currents, making it suitable for many different applications. It has a wide voltage range, which means it can accommodate different voltage requirements. It also has a low level of leakage, reducing the risk of electrostatic discharge damage.

The IRF7328TRPBF is a very useful and versatile MOSFET. Its low on-state resistance and fast switching speed make it excellent for high current, high frequency switching applications. Its wide range of applications and excellent performance for a variety of loads and currents mean it can be used in a range of different settings. Its low level of leakage adds to its reliability, making it one of the best MOSFETs available.

The specific data is subject to PDF, and the above content is for reference

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