IRF7335D1TR

Series:	FETKY™
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	2 N-Channel (Dual) Asymmetrical
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	10A
Rds On (Max) @ Id, Vgs:	17.5 mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id:	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	1500pF @ 15V
Power - Max:	2W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	14-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	14-SOIC

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IRF7335D1TR Application Field and Working PrincipleTransistors are one of the most basic and versatile elements in the world of electronics. They are simple yet powerful devices capable of controlling current, amplifying signals, and switching voltages. Transistors are also used in arrays for applications that require high power, such as in power amplifiers or power supplies. An example of such an array is the IRF7335D1TR, which offers tremendous performance in a small package.The IRF7335D1TR is a three-phase Mosfet bridge-connected FET array. It contains three independent FETs in an optimized layout that provides impressive power density and efficiency. The array\'s total on-resistance is low enough to enable it to operate at higher frequencies than many comparable devices, making it suitable for switching and power applications.The FETs in the IRF7335D1TR are all N-channel, meaning that they can be used to control current flow in one direction. The FETs are connected in an array, meaning that they can be operated in unison. This enables the current to travel through the device in a series, allowing for higher current capacity than would otherwise be possible.At the core of the device is a metal oxide semiconductor, or MOSFET. This is a type of transistor that is made up of a layer of metal oxide sandwiched between two metal contacts. The MOSFET acts as a switch when a voltage is applied to it, which allows it to control current flow.The IRF7335D1TR is typically used as an output device in applications such as power amplifiers and power supplies. Its low on-resistance allows it to switch at high frequencies, which makes it suitable for improving the efficiency of these types of systems. Additionally, the device’s power density makes it useful for applications that require large amounts of power.The IRF7335D1TR is a versatile device, and its use is limited only by the designer’s imagination. It can be used in a wide range of applications, from automotive to consumer electronics, and offers excellent performance in any application.The IRF7335D1TR is easy to use and offers impressive performance in a small package. With its low on-resistance, high frequency switching, and high power density, it is an ideal solution for applications that require high current capacity and efficiency. It is also a great choice for powering amplifiers and switches, as it can handle the high current demands of these applications while providing excellent reliability.

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