IRF7342PBF

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The IRF7342PBF is part of a family of products from International Rectifiers that fall under its NexFET™ Power MOSFET line. Within this family, the IRF7342PBF is an enhancement mode MOSFET, belonging to the MOSFET array group. This product utilizes International Rectifiers’ advanced PowerTrench® process, resulting in a low number of power dissipation and low gate charge, and an exceptional figure of merit.  The IRF7342PBF provides superior board level performance while still maintaining superior reliability and time-to-market.

The IRF7342PBF is applicable in a wide spectrum of fields; a selected few example include, power technology, personal and industrial portable products, mobile battery-powered products, handheld, portfolio computer, LCD displays, audio and video products, automotive applications, switches and converters, RF and microwave front-end applications, and base station applications.  The IRF7342PBF is designed specifically to meet the needs of designers requiring very high safe operating area, low RDS(on), low gate charge, and extremely low Gate-to-Source leakage current(IGSS).

The IRF7342PBF is available in an SOT-223 package; with a drain-to-source voltage (VDS) rating of 30V, and a continuous drain current of 5.7A - which can be pulse current of 14.1A. It utilizes a low operating temperature between –55°C and 175°C. The IRF7342PBF has an integrated ESD (ElectroStatic Discharge) protection with excellent TC level (withstanding ESD of over 2000V). The IRF7342PBF also has a RDS(on) of 0.079 Ohm and an Qg (total gate charge) rating of 7.2nC, enabling superior board level energy efficiency.

The working principle behind the IRF7342PBF is largely determined by the product belonging to the MOSFET array family. MOSFETs have a composition is which is composed of a p-doped and n-doped region on its base separated by a thin gate oxide. When gate becomes positively charged, the zener diode will break down, allowing the gate drive to flow and thus charging the gate. The voltage across the channel will then cause the electrons move in between the source and the drain, thus creating drain current that can be controlled by varying the gate voltage.

In conclusion, the IRF7342PBF is a MOSFET array designed by International Rectifiers that uses their advanced PowerTrench® process, resulting in an exceptional figure of merit. This device is suitable for many applications as a power technology, portable products, switches and converters, and base station applications. The IRF7342PBF has a number of features that make it ideal for many applications, including a drain voltage (VDS) of 30V, continuous drain current of 5.7A, low gate charge, and integrated ESD (ElectroStatic Discharge) protection.  The working principle behind this device relies on the MOSFET principle of gate voltage controlling the flow of electrons between the source and drain.

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