Allicdata Part #: | IRF7343PBF-ND |
Manufacturer Part#: |
IRF7343PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N/P-CH 55V 8-SOIC |
More Detail: | Mosfet Array N and P-Channel 55V 4.7A, 3.4A 2W Sur... |
DataSheet: | IRF7343PBF Datasheet/PDF |
Quantity: | 1901 |
Specifications
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Base Part Number: | IRF7343PBF |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 2W |
Input Capacitance (Ciss) (Max) @ Vds: | 740pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 36nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 50 mOhm @ 4.7A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.7A, 3.4A |
Drain to Source Voltage (Vdss): | 55V |
FET Feature: | Standard |
FET Type: | N and P-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
Description
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IRF7343PBFThe IRF7343PBF is an array device containing 8 N-channel MOSFETs. It is part of the family of integrated power field effect transistor (FETs) developed by International Rectifier (IR). This device is used as a power switch in various applications, from automotive to home appliances, from consumer to industrial applications. This particular device contains eight N-channel MOSFETs. Each MOSFET contains a source, drain and a gate terminal. The device has a very low on-resistance and it has a maximum voltage drop of 11 volts at a current drain of 9 amps. In addition to this, the IRF7343PBF is a surface-mounted device, meaning that it can be mounted directly onto a PCB.The MOSFETs in this device are designed to run in parallel. This allows the device to have a larger current capacity without increasing the voltage drop across the device. By adding more MOSFETs to the array, the current capacity of the device can be increased.In terms of its usage, the IRF7343PBF is typically used as a power switch in applications where high-power transistors are needed. It is well suited for DC/DC converters, switching regulators, and other power conversion applications. It has also been used in various high-power automotive applications.In terms of its working principle, the MOSFETs in the IRF7343PBF are designed to act as switches. This means that when a small voltage is applied to the gate terminal, it turns on the device, and when the voltage is removed the device turns off. The amount of voltage required for it to turn on is usually between 0.4 and 0.7V. When the device is turned on, the resistance across the drain and source terminals greatly decreases, allowing more current to flow through the device.The IRF7343PBF is part of a family of integrated power array devices developed by International Rectifier. It is a low-cost, high-power switching device, and can be used in a variety of applications which require the use of high power transistors. Its main features include its low on-resistance, its surface-mount design, and its ability to be used in parallel in order to increase its current rating. The device is suitable for applications in consumer, automotive, and industrial applications.The specific data is subject to PDF, and the above content is for reference
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