Allicdata Part #: | IRF7343PBFTR-ND |
Manufacturer Part#: |
IRF7343TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N/P-CH 55V 8-SOIC |
More Detail: | Mosfet Array N and P-Channel 55V 4.7A, 3.4A 2W Sur... |
DataSheet: | IRF7343TRPBF Datasheet/PDF |
Quantity: | 8000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Base Part Number: | IRF7343PBF |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 2W |
Input Capacitance (Ciss) (Max) @ Vds: | 740pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 36nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 50 mOhm @ 4.7A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.7A, 3.4A |
Drain to Source Voltage (Vdss): | 55V |
FET Feature: | Standard |
FET Type: | N and P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IRF7343TRPBF is an ultra-small, low-distortion MOSFET array in an industry standard 2x12 package. It offers efficient and stable performance in a variety of applications, including switching, power management, and amplification. This guide will explain the application field, working principle, and features of the IRF7343TRPBF.
Application Field
The IRF7343TRPBF is primarily used in switching applications, as it provides low-power consumption, high-speed switching, and higher reliability than other MOSFETs. It is well-suited for power management in LCD TVs and mobile phones, where it helps to regulate the power consumption of the device. It is also used as an amplifier in audio devices, as its low distortion performance produces high-quality sound reproduction.
Working Principle
The IRF7343TRPBF is an N-channel MOSFET with three gate terminals. Each gate terminal is used to independently control one of the two power MOSFET channels, allowing for dynamic control of current and voltage. The MOSFET operates in enhancement mode, meaning that the gate voltage must be raised above a certain threshold voltage for the device to become conducting. The parasitic capacitances of the device keep the gate charged when the signal is removed, allowing for a much faster switching time than bipolar transistors.
Features
The IRF7343TRPBF offers a number of benefits to its users. Its low-power operation allows it to be used efficiently in low-voltage applications. Its low-distortion performance makes it a great choice for amplifiers. Its high-frequency Operation (up to 25GHz) makes it suitable for high-speed applications. Finally, its ultra-small package size makes it suitable for surface-mount applications.
The IRF7343TRPBF is a reliable and efficient MOSFET array which is suitable for a variety of applications. Its low power consumption and high-frequency operation make it an ideal choice for power management and switching applications. Its low distortion performance makes it suitable for audio applications, and its small package size is ideal for surface-mount applications. All of these qualities make the IRF7343TRPBF an excellent choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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