IRF7351PBF

Vgs(th) (Max) @ Id:	4V @ 50µA
Base Part Number:	IRF7351PBF
Supplier Device Package:	8-SO
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power - Max:	2W
Input Capacitance (Ciss) (Max) @ Vds:	1330pF @ 30V
Gate Charge (Qg) (Max) @ Vgs:	36nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	17.8 mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C:	8A
Drain to Source Voltage (Vdss):	60V
FET Feature:	Logic Level Gate
FET Type:	2 N-Channel (Dual)
Part Status:	Discontinued at Digi-Key
Packaging:	Tube

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IRF7351PBF Application Field and Working Principle

The IRF7351PBF is a high-performance enhancement-mode vertical DMOS Power FET, suitable for use in logic level conversion applications. This FET features low on-state resistance and fast switching performance, making it a great choice for use in advanced electronic designs. The IRF7351PBF is a great solution for energy-efficient devices and low-noise components.In terms of its application field, the IRF7351PBF is used in a wide range of applications requiring high power handling, such as in electric vehicles, household appliances, power converters, and electric motor control systems. It can also be used in space-constrained power supplies, where it can provide reliable operation in a low-footprint package.The IRF7351PBF is an ideal choice for portable or automotive applications, as it provides excellent ability to dissipate heat from its body due to its vertical DMOS structure. Additionally, its low on-state resistance and fast switching speed make it an excellent choice for power switching circuits.The IRF7351PBF has a dual-gate structure, allowing for voltage or current control. This is enabled by the three gates: the main gate (G1), the main gate control (G2), and the reference gate (G3). The main gate (G1) is the main control for the FET’s switching, providing on-off control as well as current limiting, while the main gate control (G2) is used to regulate the FET’s current flow. The reference gate (G3) is used to keep the FET in a non-conductive state, enabling the IC to control the FET’s current and voltage accurately.Under normal operation, the IRF7351PBF is biased into its Turn-ON state, which is accomplished by providing positive gate voltage on the G1, G2, and G3 pins. Current flow through the FET and its output pin is then regulated by the voltage of gate G2, which controls the amount of current flowing through the FET. Finally, the reference gate (G3) can be used to override the main gate in order to keep the FET Off, allowing for complete control over the FET’s state.The IRF7351PBF is an extremely versatile device, providing high power handling and low on-state resistance for a wide range of applications. With its dual-gate structure and the ability to dissipate heat from the body, it’s the perfect solution for small portable applications, automobiles, and other high power solutions that require reliability and low-noise operation.

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