IRF7389 Allicdata Electronics
Allicdata Part #:

IRF7389-ND

Manufacturer Part#:

IRF7389

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N/P-CH 30V 8-SOIC
More Detail: Mosfet Array N and P-Channel 30V 2.5W Surface Mou...
DataSheet: IRF7389 datasheetIRF7389 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: HEXFET®
Packaging: Tube 
Part Status: Obsolete
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: --
Rds On (Max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Description

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The IRF7389 is a field effect transistor (FET) array designed for high voltage, high speed switching applications. It is made up of 8 N-Channel MOSFETs in a single package. This Array has low Rds(on) values of 0.4 Ohms and an Operating Voltage of 600V. It is capable of handling large currents up to 50A and is therefore ideal for switching applications in power control and current regulation. The ability to handle high voltage and large current makes it ideal for use in high-power LED lighting and motor control applications, as well as other power management systems. The IRF7389 also has a low gate charge of 18nC and a low input capacitance of 2nF, making it suitable for switching applications where fast switching speeds are required.

The IRF7389 consists of 8 individual N-Channel MOSFETs which are connected in series and in parallel configurations. They are divided into two groups of four MOSFETs in either a source-drain or drain-source arrangement. This provides a variety of circuit configurations which makes it ideal for designing various types of power control circuits. The array is also designed in such a way that it can be used in any environment up to a temperature of 175°C.

The working principle of the IRF7389 is the same as that of the traditional MOSFET. When a voltage is applied to the gate of the FET, a current is formed between the source and drain terminals, thus allowing the control of large currents. The FETs can be switched on and off rapidly to provide rapid switching which is desirable for fast switching applications.

The IRF7389 is most commonly used in power control and current regulation applications. It can be used to control the output of a power supply, regulate the current in a motor or other system, or to switch between two different outputs. It can also be used in semiconductor power converters and amplifiers, allowing for excellent current and power regulation. It is also used in applications such as LED lighting, voltage regulation, and other motor control systems. The IRF7389 has been designed to be suited to a wide variety of applications and is therefore extremely versatile.

The advantages of using the IRF7389 over traditional transistors include its low Rds(on), its low gate charge, and its low input capacitance. These features all contribute to its excellent performance in high voltage and high current applications. Additionally, the FETs can switch rapidly for fast switching applications. The ability to switch rapidly makes it an excellent choice for controlling high power outputs, thanks to its excellent switching speed.

The IRF7389 is an excellent choice for a variety of applications in power control and current regulation, and is an attractive choice for LED lighting and motor control applications. Its low gate charge, low Rds(on), and low input capacitance make it an ideal choice for applications that require fast switching and excellent current regulation. The array\'s ability to handle high voltages and currents make it suitable for a wide variety of power management applications.

The specific data is subject to PDF, and the above content is for reference

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