Allicdata Part #: | IRF7501CT-ND |
Manufacturer Part#: |
IRF7501TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2N-CH 20V 2.4A MICRO8 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 2.4A 1.25W Sur... |
DataSheet: | IRF7501TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 700mV @ 250µA |
Base Part Number: | IRF7501 |
Supplier Device Package: | Micro8™ |
Package / Case: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 1.25W |
Input Capacitance (Ciss) (Max) @ Vds: | 260pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs: | 8nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 135 mOhm @ 1.7A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 2.4A |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Cut Tape (CT) |
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IRF7501TR is a power MOSFET array located in the Transistor family of electronic components. It is a three terminal device and is part of the family of Insulated Gate Field Effect Transistors (MOSFET). IRF7501TR is a single MOSFET packaged in a single package with the equivalent of three individual transistors.
The main benefit of MOSFETs is their fast switching speeds and low power dissipation. This makes them suitable for high frequency and high frequency switched applications. MOSFETs are often preferred over BJTs because of their low power consumption, high switching speeds and ease of use.
The construction of MOSFET array is similar to that of conventional MOSFETs. The main difference is that each of the three terminals can be programmed to control the voltage and current in each of the three terminals. This gives the IRF7501TR an enhanced level of control over conventional MOSFETS.
The working principle behind the IRF7501TR is based around controlling the input voltage. The input voltage is used to control the gate voltage or bias voltage. This gate voltage is then used to control the voltage and current across the drain and source terminals. The output voltage is then determined by the ratio of the input voltage and the gate voltage.
One of the main applications of the IRF7501TR is in power supply and signal conditioning applications. It can be used to regulate current in power supply circuits, or it can be used to regulate voltage for signal conditioning. The ability to control the voltage across a signal line allows for precision control of the voltage supplied to the signal line.
The IRF7501TR can also be used in analog circuits and information processing systems. They can be used to boost signal levels, improve fidelity, and increase circuit performance. They also provide excellent noise reduction in digital signal applications.
An IRF7501TR MOSFET is an ideal choice for applications requiring fast and efficient switching speeds, low power dissipation, and enhanced control. This makes it an ideal choice for use in high frequency switching applications, analog circuits and information processing systems.
The specific data is subject to PDF, and the above content is for reference
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